X-On Electronics has gained recognition as a prominent supplier of KVR13LSE9S8/4 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR13LSE9S8/4 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

KVR13LSE9S8/4 Kingston

KVR13LSE9S8/4 electronic component of Kingston
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See Product Specifications
Part No.KVR13LSE9S8/4
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM
Datasheet: KVR13LSE9S8/4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 46.5003 ea
Line Total: USD 93 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2
Multiples : 1
2 : USD 46.5003
10 : USD 43.511
25 : USD 41.1328
50 : USD 40.9468
100 : USD 39.8043

   
Manufacturer
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We are delighted to provide the KVR13LSE9S8/4 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR13LSE9S8/4 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR13LSE9S8/4 4GB 1Rx8 512M x 72-Bit PC3L-10600 CL9 204-Pin ECC SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 72-bit (4GB) CL(IDD) 9 cycles DDR3L-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8, ECC, Row Cycle Time (tRCmin) 49.5ns (min.) low voltage, memory module, based on nine 512M x 8-bit FBGA Refresh to Active/Refresh 260ns (min.) components. The SPD is programmed to JEDEC standard Command Time (tRFCmin) latency DDR3-1333 timing of 9-9-9 at 1.35V or 1.5V. This 204- Row Active Time (tRASmin) 36ns (min.) pin SODIMM uses gold contact fingers. The electrical and Maximum Operating Power (1.35V) = 1.761 W* mechanical specifications are as follows: (1.50V) = 1.957 W* UL Rating 94 V - 0 o o C to 85 C Operating Temperature 0 FEATURES o o Storage Temperature -55 C to +100 C JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) Power Supply *Power will vary depending on the SDRAM. VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Thermal Sensor Grade B Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB: Height 1.18 (30mm), double sided component Continued >> Document No. VALUERAM1336-001.A00 04/23/13 Page 1 Document No. VALUERAM1336-001.A00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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