X-On Electronics has gained recognition as a prominent supplier of KVR13S9S8/4 DRAM across the USA, India, Europe, Australia, and various other global locations. KVR13S9S8/4 DRAM are a product manufactured by Kingston. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

KVR13S9S8/4 Kingston

KVR13S9S8/4 electronic component of Kingston
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Part No.KVR13S9S8/4
Manufacturer: Kingston
Category: DRAM
Description: DRAM Module DDR3 SDRAM 4Gbyte 204SODIMM
Datasheet: KVR13S9S8/4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 71.2062 ea
Line Total: USD 71.21 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 71.2062
10 : USD 67.7093
25 : USD 63.3625
50 : USD 61.3563

   
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We are delighted to provide the KVR13S9S8/4 from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KVR13S9S8/4 and other electronic components in the DRAM category and beyond.

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Memory Module Speci cations KVR13S9S8/4 4GB 1Rx8 512M x 64-Bit PC3-10600 CL9 204-Pin SODIMM DESCRIPTION SPECIFICATIONS This document describes ValueRAM s 512M x 64-bit (4GB) CL(IDD) 9 cycles DDR3-1333 CL9 SDRAM (Synchronous DRAM), 1Rx8 memory Row Cycle Time (tRCmin) 49.5ns (min.) module, based on eight 512M x 8-bit DDR3-1333 FBGA compo- Refresh to Active/Refresh 260ns (min.) nents. The SPD is programmed to JEDEC standard latency Command Time (tRFCmin) DDR3-1333 timing of 9-9-9 at 1.5V. This 204-pin SODIMM uses Row Active Time (tRASmin) 36ns (min.) gold contact fingers. The electrical and mechanical specifica- Power (Operating) 1.980 W* tions are as follows: UL Rating 94 V - 0 o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES JEDEC standard 1.5V (1.425V ~1.575V) Power Supply *Power will vary depending on the SDRAM used. VDDQ = 1.5V (1.425V ~ 1.575V) 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7 (DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB: Height 1.18 (30mm), double sided component Continued >> Document No. VALUERAM1243-001.A00 06/28/12 Page 1MODULE DIMENSIONS: Document No. VALUERAM1243-001.A00 Page 2

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Kingston Technology
KINGSTON TECHNOLOGY COMPANY
KNG
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