Memory Module Speci cations KVR16N11S8K2/8 8GB (4GB 1Rx8 512M x 64-Bit x 2 pcs.) PC3-12800 CL11 240-Pin DIMM Kit DESCRIPTION SPECIFICATIONS ValueRAM s KVR16N11S8K2/8 is a kit of two 512M x 64-bit CL(IDD) 11 cycles (4GB) DDR3-1600 CL11 SDRAM (Synchronous DRAM) 1Rx8, Row Cycle Time (tRCmin) 48.125ns (min.) memory modules, based on eight 512M x 8-bit FBGA compo- Refresh to Active/Refresh 260ns (min.) nents per module. Total kit capacity is 8GB. The SPDs are Command Time (tRFCmin) programmed to JEDEC standard latency DDR3-1600 timing of Row Active Time (tRASmin) 35ns (min.) 11-11-11 at 1.5V. Each 240-pin DIMM uses gold contact Maximum Operating Power TBD W* (per module) fingers. The electrical and mechanical specifications are as UL Rating 94 V - 0 follows: o o Operating Temperature 0 C to 85 C o o Storage Temperature -55 C to +100 C FEATURES *Power will vary depending on the SDRAM used. JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write either on the fly using A12 or MRS Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95C Asynchronous Reset PCB : Height 0.740 (18.75mm) or 1.180 (30.00mm) Important Information: The module defined in this data sheet is one of several configurations available under this part number. While all configurations are compatible, the DRAM combination and/or the module height may vary from what is described here. Continued >> Document No. VALUERAM1234-001.B00 03/26/15 Page 1MODULE DIMENSIONS: Document No. VALUERAM1234-001.B00 Page 2