PGH200N16 Kyocera AVX

PGH200N16 200 vg 1600 olts CIRCUIT OUTLINE DRAWING Dimension:mm Part of Diode Bridge & Thyristor Maximum Ratings Parameter Symbol Conditions Max. Rated Value Unit T = 107 C 200 Average Rectified Output Current Non-Biased for Thyristor Io (AV) 3-Phase Full A TC= 82 Wave Rectified 200 Biased for Thyristor 125150 Operating Junction Temperature Range Tjw -40 +150 Tj125 , Can not be Biased for Thyristor Tstg -40 +125 Storage Temperature Range AC 1 Viso 2500 V Isolation Voltage Terminal to Base, AC 1min. 6 2.5 3.5 Mounting Greased F 6 2.5 3.5 Mounting Torque Terminal M4 1.2 1.6 Gate Terminal Thermal Characteristics Parameter Symbol Conditions Maximum Value Unit () Rth(c-f) 0.06 / Thermal Resistance Case to Fin , Total , Greased (6 ) Part of Diode Bridge(6 Arm.) Maximum Rating Parameter Symbol Max.Rated Value Unit *1 VRRM 1600 V Repetitive Peak Reverse Voltage *1 VRSM 1700 V Non-Repetitive Peak Reverse Voltage Parameter Symbol Unit Conditions Max. Rated Value *1 50Hz 1 IFSM 2000 A Surge Forward Current Half Sine Wave, 1Pulse, Non-Repetitive *1 2 2 I t 210ms 20000 A I Squared t 400 Hz f Allowable Operating Frequency *11 Value Per 1 Arm.(6 ) Part of Diode Bridge(6 Arm.) Electrical Characteristics Parameter Symbol Unit Conditions Maximum Value *1 Tj = 125, V = V IRM RM RRM 20 m A Peak Reverse Current *1 Tj = 25, I = 200A VFM FM 1.26 V Peak Forward Voltage () R 0.07 / th(j-c) Junction to Case , Total Thermal Resistance *11 Value Per 1 Arm. () Part of Thyristor(1 Arm.) Maximum Rating Parameter Symbol Max.Rated Value Unit *2 V 1600 V DRM Repetitive Peak Off-State Voltage *2 V 1700 V DSM Non-Repetitive Peak Off-State Voltage *2 Can not be Biased for Thyristor Parameter Symbol Conditions Max. Rated Value Unit 50Hz 1 I 4000 A SM Surge On-State Current Half Sine Wave, 1Pulse, Non-Repetitive 2 2 I t 210ms 80000 A I Squared t V = 2/3 V , I = 2Io, Tj =125 D DRM TM di/dt 100 A/s IG = 300mA, diG/dt = 0.2A/s Critical Rate of Rise of Turned-On Current PGM 5 W Peak Gate Power PG(AV) 1 W Average Gate Power IGM 2 A Peak Gate Current VGM 10 V Peak Gate Voltage VRGM 5 V Peak Gate Reverse Voltage Electrical Characteristics Maximum Value Parameter Symbol Conditions Unit Min Typ Max I Tj = 125, V = V 50 mA DM DM DRM Peak Off-State Current Tj = 25, I = 200A VTM TM 1.15 V Peak Off-State Voltage Tj =40 300 Tj = 25 150 IGT VD = 6 V, IT = 1A mA Gate Current to Trigger Tj = 125 80 Tj =40 5.0 Tj = 25 V V = 6 V, I = 1A 3.0 V GT D T Gate Voltage to Trigger Tj = 125 2.0 V Tj =125, V = 2/3 V 0.25 V GD D DRM Gate Non-Trigger Voltage Tj =125, V = 2/3 V V/s dv/dt D DRM 500 Critical Rate of Rise of Off-State Voltage Tj =125, I = Io, V = 2/3 V TM D DRM t 150 s q dv/dt = 20V/s, VR = 100V, di/dt = 20A/s Turn-Off Time