X-On Electronics has gained recognition as a prominent supplier of IRLML6402 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLML6402 MOSFETs are a product manufactured by Leiditech. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLML6402 Leiditech

IRLML6402 electronic component of Leiditech
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See Product Specifications
Part No.IRLML6402
Manufacturer: Leiditech
Category: MOSFETs
Description: SOT-23 MOSFETs ROHS
Datasheet: IRLML6402 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0805 ea
Line Total: USD 0.8 
Availability - 1187
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1187
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0805
100 : USD 0.0655
300 : USD 0.0581
3000 : USD 0.0511
6000 : USD 0.0466
9000 : USD 0.0444

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the IRLML6402 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLML6402 and other electronic components in the MOSFETs category and beyond.

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The IRLML6402 with SOT-23 MOSFETs ROHS manufactured by Leiditech is a low voltage, high current, low side driver used for very high frequency power MOSFETs and IGBTs with Ohmic source pins. It features advanced process technology, which reduces on-resistance to very low levels by using ultra-thin wafer technology on its metal-oxide-semiconductor structure. It is also designed to improve transistors switching efficiency by providing very efficient gate drive with optimum propagation delay. Furthermore, it is RoHS compliant and is designed to reduce risks of electrostatic discharge damage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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