The LGE MMBT3904 1AM is a NPN Bipolar Transistor (BJT) packaged in a SOT-23 ROHS compliant package for easy mounting. It has a maximum Collector-Emitter Voltage (VCEO) of 40V, a maximum Collector Current (IC) of 100mA, a maximum Power Dissipation (PD) of 250mW, a DC Current Gain (hFe) of 100@10mA, and a Early Voltage (Vaf) of 1V. Furthermore, it has a Cut-off Frequency (fT) of 300MHz, a Collector-Base Voltage (Vcbo) of 300mV@50mA, a Base-Emitter Voltage (Vbeo) of 5mA, and a maximum Junction Temperature (Tj) of +150?. It has a Collector-Base leakage current (Icb) of 50nA. This component is optimal for applications requiring low leakage current, high frequency, and high power dissipation.