SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Pb RoHS LSIC1MO120E0160 1200 V N-channel, Enhancement-mode SiC MOSFET Product Summary Characteristics Value Unit V 1200 V DS Typical R 160 m DS(ON) I ( T 100 C) 14 A D C Circuit Diagram TO-247-3L Features Optimiz ed for high- Normally -off operation at frequency, high-efficiency all temperatures applications Ultra-low on-resistance Extremely low gate Halogen-free, RoHS charge and output compliant and lead-free capacitance Low gate resistance for * high-frequency switching * Body diode 1 2 3 Environmental Applications High-frequency Motor Driv es Littelfuse RoHS logo = RoHS applications High Voltage DC/DC RoHS conform Solar In verters Converters Lit telfuse HF logo = S witch Mode Power Battery Chargers Halogen Free Supplies Pb Induction Heating Littelfuse Pb-free logo UPS = Pb-free lead plating 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19SiC MOSFET LSIC1MO120E0160, 1200 V, 160 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Conditions Value Unit 22 V = 20 V, T = 25 C GS C Continuous Drain Current A I D V = 20 V, T = 100 C 14 GS C 1 Pulsed Drain Current 44 A I T = 25 C D(pulse) C Power Dissipation P T = 25 C, T = 150 C 125 W D C J Operating Junction Temperature -55 to 150 C T J -6 to 22 V Absolute maximum values GS,MAX V Transient, <1% duty cycle -10 to 25 GS,OP,TR Gate-source Voltage V Recommended DC -5 to 20 V GS,OP operating values Storage Temperature T - -55 to 150 C STG Lead Temperature for Soldering T - 260 C sold 0.6 Nm Mounting Torque M M3 or 6-32 screw D 5.3 in-lb Footnote 1: Pulse width limited by T J,max Thermal Characteristics Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case 1.0 C/W R th,JC,max Maximum Thermal Resistance, junction-to-ambient 40 C/W R th,JA,max Electrical Characteristics (T = 25 C unless otherwise specified) J Characteristics Symbol Conditions Min Typ Max Unit Static Characteristics Drain-source Breakdown Voltage 1200 - - V V V = 0 V, I = 250 A (BR)DSS GS D - 1 100 V = 1200 V, V = 0 V DS GS Zero Gate Voltage Drain Current A I DSS - 2 - V = 1200 V, V = 0 V, T = 150 C DS GS J I V = 22 V, V = 0 V - - 100 GSS,F GS DS Gate Leakage Current nA I V = -6 V, V = 0 V - - 100 GSS,R GS DS - 160 200 I = 10 A, V = 20 V D GS Drain-source On-state Resistance m R DS(ON) - 210 - I = 10 A, V = 20 V, T = 150 C D GS J V = V , I = 5 mA 1.8 2.8 4.0 DS GS D Gate Threshold Voltage V V GS,(th) - 1.9 - V = V , I = 5 mA, T = 150 C DS GS D J Resonance method, Drain-Source Gate Resistance - 0.95 - R G shorted 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/05/19