We are the renowned LSIC1MO120G0040 MOSFET seller and distributer in the USA, India, Europe, Australia, and beyond. LSIC1MO120G0040 MOSFET is a manufacturer from Littelfuse. X-ON Electronics Components provides affordable electronic MOSFET in the USA.

LSIC1MO120G0040

LSIC1MO120G0040 electronic component of Littelfuse
Part No.LSIC1MO120G0040
Manufacturer: Littelfuse
Category:MOSFET
Description: MOSFET SIC MOSFET 1200V 80MO
Datasheet: LSIC1MO120G0040 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 32.3561 ea
Line Total: USD 32.36

436 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

LSIC1MO120G0040 More Buying Options & Price Grid(s)

Availability Price Quantity
431 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 41.8392
5 : USD 38.0503
10 : USD 35.8111
50 : USD 33.9462
100 : USD 33.4506

426 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 31.3605
10 : USD 28.658
100 : USD 27.853
250 : USD 27.301
450 : USD 26.933
900 : USD 25.2425

We proudly offer the LSIC1MO120G0040 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the LSIC1MO120G0040 MOSFET.

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
LoadingGif

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Additional Infomation About Product

LSIC1MO120G0040 Silicon Carbide MOSFET Datasheet LSIC1MO120G0040 1200 V, 40 mOhm N-Channel SiC MOSFET Product Summary Characteristic Value Unit VDS 1200 V Typical R 40 mOhm DS(ON) ID (TC C) 50 A Features Optimized for high-frequency, high-efficiency applications Extremely low gate charge and output capacitance Agency Approvals and Environmental Low gate resistance for high-frequency switching Environmental Approvals Normally-off operations at all temperatures Ultra-low on-resistance Optimized package with separate driver source pin RoHS compliant, lead-free, and halogen-free Pinout Diagram Applications High-frequency applications Solar Inverters Switch Mode Power Supplies UPS Motor Drives High Voltage DC/DC Converters Battery Chargers Induction Heating 1 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 2021 Littelfuse, Inc. Revised: 2/26/2021 LSIC1MO120G0040 Silicon Carbide MOSFET Datasheet 1. Maximum Ratings ........................................................................................................................................... 3 2. Thermal Characteristics .................................................................................................................................. 3 3. Electrical Characteristics ................................................................................................................................. 3 3.1. Static Characteristics (T = 25 C unless otherwise specified) ................................................................ 3 J 3.2. Dynamic Characteristics (T = 25 C unless otherwise specified) ........................................................... 4 J 4. Reverse Diode Characteristics (T = 25 C unless otherwise specified) ........................................................ 4 J 5. Performance Curves ....................................................................................................................................... 5 6. Package Dimensions ...................................................................................................................................... 9 7. Part Numbering and Marking .......................................................................................................................... 9 8. Packing Options .............................................................................................................................................. 9 9. Packing Specifications .................................................................................................................................. 10 2 Specifications are subject to change without notice. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. 2021 Littelfuse, Inc. Revised: 2/26/2021

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Littelfuse Inc
Littelfuse Inc.
LITTELFUSE SEMITRON
LITTELFUSE WICKMANN
LITTELFUSE, INC.
Little Fuse / Wickmann
Littlefuse
SSAC
SSAC Relays
TE Connectivity / Circuit Protection
WICKMANN USA

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