TVS Diodes SMBJ-E Series RoHS Pb e3 SMBJ-E Series 08/21/2020 41356 SMBJ Series Description Uni-directional The SMBJ-E series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Excellent clamping (duty cycles):0.01% capability High temperat ure Low incremental surge to reflow soldering resistance guaranteed: 260C/40sec For surface mounted V T = V 25C BR J BR Maximum Ratings and Thermal Characteristics applications to optimize x (1+ T x (T - 25)) J O (T =25 C unless otherwise noted) board space (T:Temperature A Coefficient, typical value is Low profile package 0.1%) Parameter Symbol Value Unit Typical failure mode is EPI silicon tec hnology Peak Pulse Power Dissipation at short from over-specified T =25C by 10/1000s Waveform P 600 W A PPM voltage or current Meet MSL level1, per (Fig.2)(Note 1), (Note 2)) J-STD-020C, LF maximun Whisk er test is conducted Power Dissipation on Infinite Heat peak of 260C P 5.0 W based on JEDEC O D Sink at T =50 C L JESD201A per its table 4a Matte tin leadfree plated Peak Forward Surge Current, 8.3ms and 4c I 100 A Halogen free and RoHS FSM Single Half Sine Wave (Note 3) IEC 61000-4-2 ESD compliant Maximum Instantaneous Forward 30kV(Air), 30kV (Contact) Voltage at 50A for Unidirectional V 3.5 V Pb-free E3 means 2nd F Only EFT protection of dat a level interconnect is lines in accordance with Operating Temperature Range T -65 to 150 C Pb-free and the terminal J IEC 61000-4-4 finish material is tin(Sn) Storage Temperature Range T -65 to 175 C STG Built-in strain relief (IPC/JEDEC J-STD- Typical Thermal Resistance Junction 609A.01) R 20 C/W Fast response time: JL to Lead typically less than 1.0ps Typical Thermal Resistance Junction R 100 C/W from 0V to BV min JA to Ambient 600W peak pulse power Notes: capability at 10/1000s O 1. Non-repetitive current pulse, per Fig. 4 and derated above T (initial) =25 C per Fig. 3. J waveform, repetition rate 2. Mounted on copper pad area of 0.2x0.2 (5.0 x 5.0mm) to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. Functional Diagram Applications Bi-directional TVS devices are ideal for the protection of I/O Interfaces, V bus and other vulnerable circuits used in Telecom, CC Cathode Anode Computer, Industrial and Consumer electronic applications. Uni-directional 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/31/20TVS Diodes SMBJ-E Series Electrical Characteristics (T =25C unless otherwise noted) A Maximum Maximum Breakdown Test Reverse Maximum Part Clamping Reverse Voltage V Current Stand off BR Peak Pulse Number Marking Voltage V Leakage I C R (Volts) I Voltage V Current I I R T pp (Uni) T I V pp R (Volts) (A) MIN MAX (mA) (V) (A) SMBJ300A-E YE 300 335.0 371.0 1 486.0 1.30 1 SMBJ350A-E YG 350 391.0 432.0 1 567.0 1.10 1 SMBJ400A-E* YK 400 447.0 494.0 1 648.0 0.93 1 SMBJ440A-E* YM 440 492.0 543.0 1 713.0 0.85 1 SMBJ500A-E* YN 500 558.0 618.0 1 810.0 0.75 1 SMBJ550A-E* YP 550 614.0 680.0 1 891.0 0.67 1 SMBJ600A-E* YR 600 670.0 741.0 1 971.0 0.62 1 SMBJ650A-E* YS 650 726.0 803.0 1 1052.0 0.57 1 SMBJ700A-E* YT 700 782.0 865.0 1 1133.0 0.53 1 SMBJ750A-E* YU 750 837.0 927.0 1 1213.0 0.50 1 SMBJ850A-E* YV 850 950.0 1050.0 1 1365.0 0.44 1 Note: for parts with * are still under development I-V Curve Characteristics Uni-directional VBR Vc VR V IR VF IT Ipp P Peak Pulse Power Dissipation -- Max power dissipation PPM V Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation R V Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (I ) BR T V Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current) C I Reverse Leakage Current -- Current measured at V R R V Forward Voltage Drop for Uni-directional F 2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/31/20