TVS Diode Array Datasheet SP1004 Series 5pF 8kV Bidirectional TVS Array 6/25/2021 ESU270-54 RoHS Pb GREEN N/A Description The SP1004 are back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high-speed signal pins. Features & Benefits RoHS compliant and Lead- Low capacitance of 5pF (TYP) free per I/O ESD, IEC 61000-4-2, 8kV Low leakage current of 1A contact, 15kV air (MAX) at 5V Additional Information Capable of withstanding Small SOT953 package >1,000 8kV ESD strikes AEC-Q101 Qualified Lightning, IEC 61000-4-5, 2nd Edition, 2A (tp=8/20s) Applications Resources Accessories Samples MP3-PMPs Digital cameras DVD players Set top boxes Pinout Desktops Notebooks Mobile phones I/O 1 I/O 5 I/O 2 Application Example RCA jacks I/O 3 I/O 4 Audio codec Left - In SOT953 Right - In Notes: Left - Out 1 Any of the 5 I/O pins can be tied to GND to provide 4 channels of bidirectional protection Right - Out Functional Block Diagram 5 4 SP1004-04VTG (SOT953) Signal Ground Shield Ground 1 2 3 Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 04/14/21 Back panel (STB, TV) TVS Diode Array Datasheet SP1004 Series 5pF 8kV Bidirectional TVS Array Absolute Maximum Ratings Symbol Parameter Value Units I Peak Pulse Current (t =8/20s) 2.0 A PP p T Operating Temperature 40 to 125 C OP T Storage Temperature 55 to 150 C STOR Caution: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range 55 to 150 C Maximum Junction Temperature 150 C Maximum Lead Temperature (Soldering 20-40s) 260 C Electrical Characteristics (TOP=25C) Parameter Symbol Test Conditions Min Typ Max Units 1 Reverse Voltage Drop V I =1mA 6.0 9.5 V R R 1 Reverse Standoff Voltage V I 1A 6.0 V RWM R 1 Reverse Leakage Current I V =5V 0.1 A LEAK R I =1A, t =8/20s 10 V PP p 2 Clamp Voltage V C I =2A, t =8/20s 12 V PP p Dynamic Resistance R (V - V ) / (I - I ) 2.0 DYN C2 C1 PP2 PP1 3 IEC 61000-4-2 (Contact Discharge) 8 kV 1,2 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV Reverse Bias=0V 6 7 pF 1,2 Diode Capacitance C D Reverse Bias=1.5V 5 6 pF 1 Note: Parameter specified with pin 2 grounded externally. 2 Parameter is guaranteed by design and/or device characterization. 3 Capable of withstanding >1,000 pulses at 1s intervals. Capacitance vs. Reverse Bias Insertion Loss (S21) 7.0 5 6.0 0 5.0 -5 -10 4.0 -15 3.0 -20 2.0 -25 1.0 -30-30 0.0 10 100 1000 10000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (MHz) DC Bias (V) 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 04/14/21 Capacitance (pF) Attenuation (dB)