X-On Electronics has gained recognition as a prominent supplier of LND4N60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. LND4N60 MOSFETs are a product manufactured by Lonten Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LND4N60 Lonten Semiconductor

Name: LND4N60
Brand: Lonten Semiconductor
SKU: LND4N60_Lonten Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

LND4N60 electronic component of Lonten Semiconductor

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See Product Specifications

Part No.	LND4N60
Manufacturer:	Lonten Semiconductor
Category:	MOSFETs
Description:	MOSFET N Trench 600V 4A 4V @ 250uA 2.4 Î© @ 2A,10V TO-220F RoHS
Datasheet:	LND4N60 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4188 ea
Line Total: USD 0.42

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

LND4N60 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 06 Dec to Wed. 11 Dec MOQ : 1 Multiples : 1	1 : USD 0.4188 10 : USD 0.3263

Specifications

Manufacturer Lonten Semiconductor Lonten Semiconductor
Product Category MOSFETs MOSFETs
Rohs Y Y
Package TO - 220F TO - 220F
Brand Category Lonten Semiconductor Lonten Semiconductor
Fet Type N Trench N Trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 4 A 4 A
Vgsth Max @ Id 4V @ 250Ua 4V @ 250Ua
Rds On Max @ Id Vgs 2.4 @ 2A,10V 2.4 @ 2A,10V
Power Dissipation-Max Ta 32 W 32 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 4 A 4 A
Drain Source On Resistance Rdson@Vgs Id 2.4 Ohms @10V , 2A 2.4 Ohms @10V , 2A
Power Dissipation Pd 32 W 32 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel

We are delighted to provide the LND4N60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LND4N60 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The LND4N60 with MOSFET N Trench 600V 4A 4V @ 250uA 2.4 Î© @ 2A, 10V TO-220F RoHS is an N-Channel Enhancement Mode Power MOSFET manufactured by Lonten Semiconductor. It has a maximum Drain-Source Voltage of 600V, maximum Drain Current of 4A, maximum Gate-Source Voltage of 4V, Gate-Source Leakage Current of 250uA, Drain-Source On-Resistance of 2.4 Ohms and a breakdown Voltage of 10V. It is packaged as a TO-220F RoHS, suitable for applications requiring a high rated voltage MOSFET with low on-resistance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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