LY61L20508A Rev. 1.0 2048K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Jan.21.2014 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY61L20508A Rev. 1.0 2048K X 8 BIT HIGH SPEED CMOS SRAM GENERAL DESCRIPTION FEATURES The LY61L20508A is a 16M-bit high speed CMOS Fast access time : 10ns static random access memory organized as 2048K Low power consumption: words by 8 bits. It is fabricated using very high Operating current: performance, high reliability CMOS technology. Its 90mA (TYP.) standby current is stable within the range of Standby current: operating temperature. 4mA (TYP.) Single 3.3V power supply The LY61L20508A operates from a single power All inputs and outputs TTL compatible supply of 3.3V and all inputs and outputs are fully Fully static operation TTL compatible Tri-state output Data retension voltiage : 1.5V (MIN.) Green package available Package : 44-pin 400mil TSOP-II 48-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Operating Power Dissipation VCC Range Speed Family Temperature Standby(ISB1,TYP.) Operating(ICC,TYP.) 0 ~ 70 LY61L20508A 2.7 ~ 3.6V 10ns 4mA 90mA -40 ~ 85 LY61L20508A(I) 2.7 ~ 3.6V 10ns 4mA 90mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A20 Address Inputs DQ0 DQ7 Data Inputs/Outputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input VCC Power Supply VSS Ground Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, lndustry E . Rd. 9, Science-Based Industrial Park, Hsinchu 300, Taiwan TEL: 886-3-6668838 FAX: 886-3-6668836 1
