LY62L204916A Rev.1.2 2048K X 16 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise I on page 4 I on page 8 June. 10. 2013 SB1 & DR 2. Revise VIH(max) & VIL(min) note on page 4 VIH(max) = VCC + 2.0V for pulse width less than 6ns. VIL(min) = VSS - 2.0V for pulse width less than 6ns. Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY62L204916A Rev.1.2 2048K X 16 BIT LOW POWER CMOS SRAM FEATURE GENERAL DESCRIPTION Fast access time : 55/70ns The LY62L204916A is a 33,554,432-bit low power Low power consumption: CMOS static random access memory organized as Operating current : 45/30mA (TYP.) 2,097,152 words by 16 bits. It is fabricated using Standby current : 6 A (TYP.) SL-version very high performance, high reliability CMOS technology. Its standby current is stable within the Single 2.7V ~ 3.6V power supply range of operating temperature. All inputs and outputs TTL compatible Fully static operation The LY62L204916A is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 1.2V (MIN.) The LY62L204916A operates from a single power supply of 2.7V ~ 3.6V and all inputs and Green package available Package : 48-ball 8mm x 10mm TFBGA outputs are fully TTL compatible PRODUCT FAMILY Operating Power Dissipation Product Temperatur Vcc Range Speed Family Standby(ISB1,TYP.) Operating(Icc,TYP.) e LY62L204916A 0 ~ 70 2.7 ~ 3.6V 55/70ns 6A(SL) 45/30mA -40 ~ 85 LY62L204916A(I) 2.7 ~ 3.6V 55/70ns 6A(SL) 45/30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Vcc A0 A20 Address Inputs Vss DQ0 DQ15 Data Inputs/Outputs CE , CE2 Chip Enable Input 2048Kx16 A0-A20 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input LB Lower Byte Control UB Upper Byte Control VCC Power Supply VSS Ground DQ0-DQ7 Lower Byte I/O DATA COLUMN I/O CIRCUIT DQ8-DQ15 Upper Byte CE CE2 WE CONTROL OE CIRCUIT LB UB Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1