MA4BN1840-2
Monolithic HMIC
Rev. V5
Integrated Bias Network
Features
Broad Bandwidth Specified 18 to 40 GHz
Usable 10 GHz to 50 GHz
Extremely Low Insertion Loss
High RF-DC Isolation
Rugged, Fully Monolithic Glass Encapsulation
J1 & J2 Matched to 50
RoHS* Compliant
Description
The MA4BN1840-2 is a fully monolithic broadband
TM
bias network utilizing MACOMs HMIC
(Heterolithic Microwave Integrated Circuit) process,
US Patent 5,268,310. This process allows the
formation of silicon vias by imbedding them in low
Yellow areas denote bond pads
loss, low dispersion glass along with high Q spiral
inductors and MIM capacitors. The close proximity
between elements and the combination of silicon
and glass gives this HMIC device low loss and high
performance with exceptional repeatability through Schematic
millimeter frequencies.
Large bond pads facilitate the use of low inductance
ribbon bonds, while the gold backside metallization
J1 (IN)
J2 (OUT )
provides the RF and DC ground. This allows for
manual or automatic die attach via electrically
conductive silver epoxy or RoHS compliant solders.
The MA4BN1840-2 bias network is ideally suited for
the DC biasing of PIN diode control circuits. It
functions as an RF-DC de-coupling network as well
as the DC return. The device can also be used as a
DC DC
Ground
bi-directional re-active coupler for Schottky detector Ground
circuits. DC currents up to 150 mA and DC voltages
B1 B2
DC Bias #1
up to 50 V may be used. DC Bias #2
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
MA4BN1840-2
Monolithic HMIC
Rev. V5
Integrated Bias Network
o
Electrical Specifications: Freq. = 18 - 40 GHz, T = +25 C on Wafer Measurements
A
Parameter Min. Typ. Max. Units
Insertion Loss 0.25 0.4 dB
RF - DC Isolation 30 35 dB
Input Return Loss 15 17 dB
Output Return Loss 15 17 dB
Maximum Operating Conditions @ +25C (Unless otherwise noted)
Parameter Value
Operating Temperature -65C to +125C
Storage Temperature -65C to +150C
Die Attach Temperature 320C for 20 sec
RF CW Incident Power 10 Watts
DC Bias Current +/- 150 mA
DC Bias Voltage +/- 50 V
DIE Dimensions
Millimeters Mils
Dim.
Min. Nom. Max. Min. Nom. Max.
A 1.425 - 1.475 56.1 - 58.1
B 1.705 - 1.755 67.1 - 69.1
C - 0.679 - - 26.7 -
D - 0.813 - - 32.0 -
E - 0.392 - - 15.4 -
F 0.499 - 0.549 19.6 - 21.6
G 0.109 - 0.159 4.3 - 6.2
H 0.088 - 0.138 3.5 - 5.4
- 0.130 - - 5.1 -
RF Bond Pads
J1 & J2
- 0.152 - - 6.0 -
- 0.221 - - 8.7 -
DC Bond Pads
B1 & B2
- 0.122 - - 4.8 -
Chip Thickness - 0.125 - - 4.9 -
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: