MA4Exxxx Series GaAs Flip Chip Rev. V12 Schottky Barrier Diodes Features Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317 Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial MA4E1318 wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. MA4E1319 -1 Typical applications include single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high MA4E1319 - 2 LO suppression at the RF input. Ordering Information Part Number Package MA4E1317 MA4E1318 MA4E1319-1 100 piece Gel Pack MA4E1319-2 MA4E2160 MA4E2160 MADS-001317-1278HP 3000 piece Reel MADS-001318-1197HP 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4Exxxx Series GaAs Flip Chip Rev. V12 Schottky Barrier Diodes Electrical Specifications +25C MA4E1317 MA4E1318 Parameters and Test Conditions Symbol Units Min. Typ. Max. Min. Typ. Max. 3 Junction Capacitance 0 V, 1 MHz C pF - .020 - - .020 - J 1 3 3 3 Total Capacitance 0 V, 1 MHz C pF .030 .045 .060 .030 .045 .060 T Junction Capacitance Difference DC pF - - - - - - J 2 Series Resistance +10 mA R - 4 7 - 4 7 S Forward Voltage +1 mA V 1 V .60 .70 .80 .60 .70 .80 F Forward Voltage Difference +1 mA DV V - - - - .005 .010 F Reverse Breakdown Voltage -10 A V V 4.5 7 - - - - BR 4 4 SSB Noise Figure NF dB - 6.5 - - 6.5 - MA4E1319-1 or -2 MA4E2160 Parameters and Test Conditions Symbol Units Min. Typ. Max. Min. Typ. Max. 3 3 Junction Capacitance at 0 V at 1 MHz C pF - .020 - - - .020 J 1 3 3 3 3 3 3 Total Capacitance at 0 V at 1 MHz C pF .030 .045 .060 .060 .030 .045 T Junction Capacitance Difference DC pF - .005 .010 .010 - .005 J 2 Series Resistance at +10 mA R - 4 7 7 - 4 S Forward Voltage at +1 mA V 1 V .60 .70 .80 .80 .60 .70 F Forward Voltage Difference at +1 mA DV V - .005 .010 .010 - .005 F Reverse Breakdown Voltage at -10 A V V 4.5 7 - - 4.5 7 BR 4 4 SSB Noise Figure NF dB - 6.5 - - - 6.5 1. Total capacitance is equivalent to the sum of junction capacitance and parasitic capacitance. 2. Series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 . 3. Capacitance for the MA4E1318, MA4E2160, MA4E1319-1 or -2 is per Schottky diode. 4. Measured at a LO frequency of 9.375 GHz, with an IF frequency of 300 MHz, LO drive level is +6 dBm for a single Schottky junction. The IF noise figure contribution (1.5 dB) is included. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: