MA4E2502 Series TM SURMOUNT Low, Medium, and High Barrier Rev. V3 Silicon Schottky Diodes Features Extremely Low Parasitic Capacitance & Inductance Surface Mountable in Microwavable Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300C, 16 hours) Lower Susceptibility to ESD Damage Description and Applications The MA4E2502 Surmount Series diodes are The multilayer metallization employed in the silicon low, medium, and high barrier Schottky fabrication of the Surmount Schottky junctions devices fabricated with the patented Heterolithic includes a platinum diffusion barrier, which permits Microwave Integrated Circuit (HMIC) process. HMIC all devices to be subjected to a 16-hour circuits consist of silicon pedestals which form non-operating stabilization bake at 300C. diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, The 0502 outline allows for surface mount microstrip transmission medium. The combination of placement and multi-functional polarity orientations. silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics The MA4E2502 series of Surmount Schottky in a low profile, reliable device. diodes are recommended for use in microwave circuits through Ku band frequencies for lower power The Surmount Schottky devices are excellent applications such as mixers, sub-harmonic mixers, choices for circuits requiring the small parasitics of a detectors, and limiters. The HMIC construction beam lead device coupled with the superior facilitates the direct replacement of more fragile mechanical performance of a chip. The Surmount beam lead diodes with the corresponding structure employs very low resistance silicon vias to Surmount diode, which can be connected to a connect the Schottky contacts to the metalized hard or soft substrate circuit with solder. mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. Ordering Information 1 Part Number Package 2 MA4E2502x-1246W wafer on frame MA4E2502x-1246 100 piece Die in carrier MADS-002502-1246xP 3000 piece reel 1. Replace x with L for low barrier, M for medium barrier or H for high barrier. 2. Call factory for standard quantities for full wafers on frames. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4E2502 Series TM SURMOUNT Low, Medium, and High Barrier Rev. V3 Silicon Schottky Diodes Electrical Specifications: Recommended Freq. = DC - 18 GHz, +25C 3 R Slope Resistance T Model V 1 mA V 10 A C 0 V F B T Type (V 1 - V 2)/(10.5 - 9.5 mA) F F Number (mV) (V) (pF) ( ) 330 max. 3 min. 0.12 max. 16 typ. MA4E2502L Low Barrier 300 typ. 5 typ. 0.10 typ. 20 max. 470 max. 3 min. 0.12 max. 12 typ. MA4E2502M Medium Barrier 420 typ. 5 typ. 0.10 typ. 18 max. 700 max. 3 min. 0.12 max. 11 typ. MA4E2502H High Barrier 650 typ. 5 typ. 0.10 typ. 15 max. 3. R is the dynamic slope resistance where R = R + R , where R = 26 / Idc (Idc is in mA) T T S J J Absolute Maximum Ratings +25C Parameter Absolute Maximum Forward Current 20 mA Reverse Voltage 5 V RF C.W. Incident Power 20 dBm RF & DC Dissipated Power 50 mW Junction Temperature +175C Operating Temperature -40C to +125C Storage Temperature -65C to +150C Electrostatic Discharge (ESD) Classification Class 0 HBM (Human Body Model) Typical Performance Curves The MA4E2502L-1246 chip was evaluated in a detector circuit in which the Schottky diode terminates a 50 transmission line on a duroid substrate. The chip was attached to the terminal of a 3.5 mm connector and the output voltage was measured through a bias tee on a voltmeter. Matching was not attempted. Output Voltage vs. Frequency Output Voltage vs. Input Power 10 10 -20 dBm 0 dBm +20 dBm -10 dBm +10 dBm 8 GHz 18 GHz 23 GHz 1 1 0.1 0.1 0.01 0.01 8 11 14 17 20 23 -20 -15 -10 -5 0 5 10 Frequency (GHz) Input Power (dBm) 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: