MA4E2514 Series TM SURMOUNT Low and Medium Barrier Silicon M/A-COM Products Rev. V5 Schottky Diodes: Tee Pair Features Extremely Low Parasitic Capitance and Induc- A tance Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300C, 16 hours) Lower Susceptibility to ESD Damage B Description TM The MA4E2514 SURMOUNT Diode Tee Series are Silicon Low, and Medium Barrier Schottky De- vices fabricated with the patented Heterolithic Mi- crowave Integrated Circuit (HMIC) process. HMIC Circuits consist of Silicon pedestals which form di- odes or via conductors embedded in glass dielec- tric, which acts as the low dispersion, low loss mi- crostrip transmission medium. The combination of silicon and glass allows HMIC devices to have ex- cellent loss and power dissipation characteristics in C a low profile, reliable device. The Surmount Schottky devices are excellent DDE choices for circuits requiring the small parasitics of a beam lead device coupled with the superior me- chanical performance of a chip. The Surmount structure employs very low resistance silicon vias Case Style 1116 to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. INCHES MILLIMETERS These devices are reliable, repeatable, and a lower DIM cost performance solution to conventional devices. MIN. MAX. MIN. MAX. They have lower susceptibility to electrostatic dis- charge than conventional beam lead Schottky di- A 0.0445 0.0465 1.130 1.180 odes. B 0.0445 0.0465 1.130 1.180 The multi-layer metallization employed in the fabri- C 0.0040 0.0080 0.102 0.203 cation of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all de- D Sq. 0.0128 0.0148 0.325 0.375 vices to be subjected to a 16-hour non-operating E 0.0128 0.0148 0.325 0.375 stabilization bake at 300C. The 0505 outline allows for Surface Mount place- ment and multi-functional polarity orientations. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice. MA4E2514 Series TM SURMOUNT Low and Medium Barrier Silicon M/A-COM Products Rev. V5 Schottky Diodes: Tee Pair 1,2,3 Electrical Specifications 25C (Measured as Single Diodes) Rt Slope Resistance Recommended Vf 1 mA Vb 10 uA Ct 0 V (Vf1 Vf2)/ Model Number Type Freq. Range (mV) (V) (pF) (10.5 mA - 9.5 mA) ( ) 330 Max 3 Min 0.12 Max 16 Typ MA4E2514L Low Barrier DC - 18 GHz 300 Typ 5 Typ 0.10 Typ 20 Max 470 Max 3 Min 0.12 Max 12 Typ MA4E2514M Medium Barrier DC - 18 GHz 400 Typ 5 Typ 0.10 Typ 18 Max 1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance. 2. Max Forward Voltage Difference Vf 1 mA: 10 mV 4 Absolute Maximum Ratings 3. Max Total Capacitance Difference Ct 0 V: 0.03 pF Parameter Value Applications Operating Temperature -40C to +150C The MA4E2514 Family of Surmount Schottky diodes Storage Temperature -40C to +150C are recommended for use in microwave circuits through Ku band frequencies for lower power applica- Forward Current 20 mA tions such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the Reverse Voltage 5 V direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be RF C.W. Incident Power + 20 dBm connected to a hard or soft substrate circuit with sol- RF & DC Dissipated Power 50 mW der. Electrostatic Discharge Class 0 5 Handling ( ESD ) Classification All semiconductor chips should be handled with care to avoid damage or contamination from perspiration 4. Exceeding any of these values may result in permanent dam- age. and skin oils. The use of plastic tipped tweezers or 5. Human Body Model vacuum pickups is strongly recommended for individ- ual components. The top surface of the die has a Die Bonding protective polyimide coating to minimize damage. For Hard substrates, we recommend utilizing a vac- uum tip and force of 60 to 100 grams applied uni- The rugged construction of these Surmount devices formly to the top surface of the device, using a hot gas allows the use of standard handling and die attach bonder with equal heat applied across the bottom techniques. It is important to note that industry stan- mounting pads of the device. When soldering to soft dard electrostatic discharge (ESD) control is required substrates, it is recommended to use a lead-tin inter- at all times, due to the sensitive nature of Schottky face at the circuit board mounting pads. Position the junctions. Bulk handling should insure that abrasion die so that its mounting pads are aligned with the cir- and mechanical shock are minimized. cuit board mounting pads. Reflow the solder paste by applying equal heat to the circuit at both die-mounting Die Bonding pads. The solder joint must not be made one at a Die attach for these devices is made simple through time, creating unequal heat flow and thermal stress. the use of surface mount die attach technology. Solder reflow should not be performed by causing Mounting pads are conveniently located on the bottom heat to flow through the top surface of the die. Since surface of these devices, and are opposite the active the HMIC glass is transparent, the edges of the junction. The devices are well suited for high tem- mounting pads can be visually inspected through the perature solder attachment onto hard substrates. die after the die attach is completed. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or volume is not guaranteed. information contained herein without notice.