MA4E2532L-1113, MA4E2532M-1113 TM SURMOUNT Low & Medium Barrier M/A-COM Products Rev. V3 Silicon Schottky Diodes: Ring Quad Series Case Style 1113 Features Extremely Low Parasitic Capacitance and In- ductance A Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300C, 16 hours) Lower Susceptibility to ESD Damage B Description TM The MA4E2532-1113 Series SURMOUNT Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combi- nation of silicon and glass allows HMIC devices to have excellent loss and power dissipation charac- C teristics in a low profile, reliable device. The Surmount Schottky devices are excellent DDE choices for circuits requiring the small parasitics of a beam lead device coupled with the superior me- chanical performance of a chip. The Surmount structure employs very low resistance silicon vias Case Style 1113 to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. INCHES MILLIMETERS These devices are reliable, repeatable, and a lower DIM cost performance solution to conventional devices. MIN. MAX. MIN. MAX. They have lower susceptibility to electrostatic dis- A 0.0445 0.0465 1.130 1.180 charge than conventional beam lead Schottky di- B 0.0445 0.0465 1.130 1.180 odes. C 0.0040 0.0080 0.102 0.203 The multi-layer metallization employed in the fabri- D Sq. 0.0128 0.0148 0.325 0.375 cation of the Surmount Schottky junctions includes E 0.0128 0.0148 0.325 0.375 a platinum diffusion barrier, which permits all de- vices to be subjected to a 16-hour non-operating stabilization bake at 300C. The 0505 outline allows for Surface Mount place- ment and multi-functional polarity orientations. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed. product(s) or information contained herein without notice. MA4E2532L-1113, MA4E2532M-1113 TM SURMOUNT Low & Medium Barrier M/A-COM Products Rev. V3 Silicon Schottky Diodes: Ring Quad Series Electrical Specifications 25C (Measured as Single Diodes) Rt Slope Resistance Recommended Vf 1 mA Ct 0 V (Vf1-Vf2) / Vf 1 mA Model Number Type Freq. Range (mV) (pF) (10.5 mA - 9.5 mA) (mV) ( ) 330 Max. 0.16 Max. 16 Typ. MA4E2532L-1113 Low Barrier DC - 18 GHz 10 Max. 300 Typ. 0.10 Typ. 20 Max. 470 Max. 0.18 Max. 10 Typ. MA4E2532M-1113 Medium Barrier DC - 18 GHz 10 Max. 440 Typ. 0.12 Typ. 18 Max. 1. Rt is the dynamic slope resistance where Rt = Rs + Rj where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance. Applications Die Bonding TM The MA4E2532-1113 Series SURMOUNT Low Die attach for these devices is made simple and Medium Barrier Silicon Schottky Ring Quad through the use of surface mount die attach tech- Diodes are recommended for use in microwave nology. Mounting pads are conveniently located on circuits through Ku band frequencies for lower the bottom surface of these devices, and are oppo- power applications such as mixers, sub-harmonic site for the active junction. The devices are well mixers, detectors and limiters. The HMIC construc- suited for high temperature solder attachment onto tion facilitates the direct replacement of more frag- hard substrates. 80Au/20Sn and Sn63/Pb36/Ag2 ile beam lead diodes with the corresponding Sur- solders are acceptable for usage. mount diode, which can be connected to a hard or soft substrate circuit with solder. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a Handling hot gas bonder with equal heat applied across the All semiconductor chips should be handled with bottom mounting pads of the device. When solder- care to avoid damage or contamination from per- ing to soft substrates it is recommended to use a spiration and skin oils. The use of plastic tipped lead-tin interface at the circuit board mounting tweezers or vacuum pickups is strongly recom- pads. Position the die so that its mounting pads mended for individual components. The top sur- are aligned with the circuit board mounting pads. face of the die has a protective polyimide coating to Reflow the solder paste by applying equal heat to minimize damage. the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un- The rugged construction of these Surmount de- equal heat flow and thermal stress. Solder reflow vices allows the use of standard handling and die should Not be performed by causing heat to flow attach techniques. It is important to note that in- through the top surface of the die. Since the HMIC dustry standard electrostatic discharge (ESD) con- glass is transparent, the edges of the mounting trol is required at all times, due to the sensitive na- pads can be visually inspected through the die after ture of Schottky junctions. Bulk handling should die attach is completed. insure that abrasion and mechanical shock are minimized. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- Visit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed. product(s) or information contained herein without notice.