MAALSS0042 Low Noise Amplifier Rev. V1 1.575 GHz Functional Diagram Features Low Noise Figure: 1.15 dB High Gain: 27 dB GGNDND GGNDND Low Power Consumption: 5V, 20 mA High Dynamic Range Lead-Free SOIC-8 Package RFRF IN IN GGNDND 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 260C Reflow Compatible GGNDND RFRF O OUTUT RoHS* Compliant Version of AM50-0002 Description GGNDND GGNDND M/A-COMs MAALSS0042 is a high performance GaAs MMIC low noise amplifier in a lead-free SOIC 3,4,5 8-lead surface mount plastic package. The Pin Configuration MAALSS0042 employs a monolithic 3-stage self- Pin No. Pin Name Description bias design and a simple external matching network to obtain minimum noise figure. 1 GND Ground 2 RF IN RF Input The MAALSS0042 is ideally suited for use where low noise figure, high gain, high dynamic range and 3 GND Ground low power consumption are required. Typical 4 GND Ground applications include receiver front ends in the Global 5 GND Ground Positioning System (GPS) market, as well as standard gain blocks, buffer amps, driver amps, and 6 RF OUT RF Output, V DD IF amps in both fixed and portable systems. 7 GND Ground M/A-COMS MAALSS0042 is fabricated using a 8 GND Ground mature 0.5-micron gate length GaAs process. The 3. Pins 1, 3, 4, 5, 7, and 8 must be RF and DC grounded (see process features full passivation for increased Recommended PCB Configuration). 4. Pin 2 is the RF input and must be connected to the simple performance reliability. matching network shown in the Application Schematic. 5. Pin 6 is the RF output. V is also applied on Pin 6. DD 1,2 Ordering Information 6,7 Absolute Maximum Ratings Part Number Package Parameter Absolute Maximum MAALSS0042 Bulk Packaging V +10 VDC DD Input Power 17 dBm MAALSS0042TR-3000 3000 piece reel 8 Channel Temperature +150 C MAALSS0042SMB Sample Test Board Operating Temperature -40 C to +85 C 1. Reference Application Note M513 for reel size information. Storage Temperature -65 C to +150 C 2. Die quantity varies. 6. Exceeding any one or combination of these limits may cause permanent damage to this device. 7. M/A-COM does not recommend sustained operation near these survivability limits. 8. Typical thermal resistance ( jc) = +165 C/W * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAALSS0042 Low Noise Amplifier Rev. V1 1.575 GHz Electrical Specifications: T = +25C, V = +5 V, Z = 50 A DD 0 Parameter Test Conditions Units Min. Typ. Max. Gain F = 1.575 GHz, P = -35 dBm dB 25 27 29 IN Noise Figure F = 1.575 GHz, P = -35 dBm dB - 1.15 1.4 IN Input VSWR F = 1.575 GHz, P = -35 dBm Ratio - 2.0:1 - IN Output VSWR F = 1.575 GHz, P = -35 dBm Ratio - 1.5:1 - IN Output P1dB F = 1.575 GHz dBm - 1 - Input IP F = 1.575 GHz, P = -35 dBm dBm - -14 - 3 IN Reverse Isolation F = 1.575 GHz, P = -35 dBm dB - 48 - IN Bias Current mA 15 20 25 Recommended PCB Configuration Application Schematic GND GND 1 8 T1 GND RF IN 2 7 GND T2 3 6 RF OUT, V DD GND GND 4 5 Frequency = 1.575 GHz Impedance Electrical Length Dimensions in inches (mm). T1 57.2 36.0 T2 82.7 16.2 Lead-Free SOIC-8 Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: