MAAM-009563 RF Driver Amplifier Rev. V2 250 - 3000 MHz Features Functional Block Diagram OIP3: 47 dBm Broadband Operation High Efficiency V 1 8 RF CC1 IN2 Class 2 ESD Rating Lead-Free SOIC-8EP Package Halogen-Free Green Mold Compound 2 7 N/C N/C RoHS* Compliant and 260C Reflow Compatible RF OUT 3 6 N/C Description / V CC2 The MAAM-009563 RF driver amplifier is a two stage GaAs MMIC which exhibits exceptional RF OUT RF 4 5 IN / V linearity performance as well as featuring high gain CC2 in a lead-free SOIC-8EP surface mount plastic package. The MAAM-009563 is fabricated using a GaAs HBT 3 Pin Configuration process to realize low current and high power functionality. The process features full passivation Pin No. Pin Name Description for increased performance and reliability. 1 V 1st Stage V & RF Output CC1 CC The MAAM-009563 has been designed to be a functional driver amplifier from 250 to 3000 MHz. 2 N/C No Connection This broad operation is achieved using external matching components as shown in the PCB layout. 3 N/C No Connection Component values are selected to center the 200 MHz instantaneous bandwidth within the overall 4 RF Amplifier Input IN frequency range. 5 RF / V Amplifier Output & 2nd Stage V OUT CC2 CC 1,2 Ordering Information 6 RF / V Amplifier Output & 2nd Stage V OUT CC2 CC Part Number Package 7 N/C No Connection MAAM-009563-000000 Bulk RF 8 2nd Stage RF Input IN2 3. The exposed pad centered on the package bottom must be MAAM-009563-TR3000 3000 piece reel connected to the RF and DC ground. MAAM-009563-001SMB Sample Board 1. Reference Application Note M513 for reel size information. 2. Sample board includes 5 loose parts. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1111 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM-009563 RF Driver Amplifier Rev. V2 250 - 3000 MHz Electrical Specifications: Freq. = 2140 MHz, T = 25C, V = +5 V, Z = 50 A CC 0 Parameter Units Min. Typ. Max. Gain dB 17 19.5 Noise Figure dB 6.25 Input Return Loss dB 13 Output Return Loss dB 13 Output P1dB dBm 31 Output IP3 dBm 44 47 P = -4 dBm / tone, 1 MHz spacing IN Quiescent Current mA 500 Current (P = -1 dBm) mA 510 640 IN 4,5 6 Absolute Maximum Ratings Maximum Operating Conditions Maximum Operating Parameter Absolute Maximum Parameter Conditions 7 Junction Temperature 170C RF Output Power 32 dBm Voltage 6 volts RF Output Power 31 dBm Operating Temperature -40C to +85C Storage Temperature -65C to +150C 6 6. These operating conditions will ensure MTTF > 1 x 10 hours. Junction Temperature 210C 7. Junction Temperature (T ) = T + jc * ((V * I) - (P - P )) J A OUT IN Typical thermal resistance ( jc) = 20 C/W 4. Exceeding any one or combination of these limits may cause a) For T = 25C, A permanent damage to this device. 5. M/A-COM Technology Solutions does not recommend T = 74 C 5 V, 535 mA, P = 24 dBm, P = 4.5 dBm J OUT IN sustained operation near these survivability limits. b) For T = 85C, A T = 123 C 5 V, 430 mA, P = 24 dBm, P = 5.5 dBm J OUT IN 2222 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: