MAAM-010513 Amplifier, Driver Rev. V5 40.5 - 43.5 GHz Features Functional Schematic Gain: 23 dB P1dB: 23 dBm OIP3: 32 dBm Variable Gain with Adjustable Bias Lead-Free 5 mm Laminate Package RoHS* Compliant and 260C Reflow Compatible Description The MAAM-010513 is a 3-stage driver amplifier with excellent return losses, in a 5 mm laminate package allowing easy assembly. This amplifier product is fully matched to 50 ohms on both the input and output. It can be used as a driver amplifier stage in transmit chains or as an LO buffer amplifier. It is ideally suited for 42 GHz band point-to-point radios. Each device is 100% RF tested to ensure performance compliance. The part is fabricated using an efficient pHEMT process. 1 Ordering Information Pin Configuration Part Number Package Pin No. Function Pin No. Function MAAM-010513-000000 Bulk Quantity 1 RFIN 7 RFOUT MAAM-010513-TR0200 200 Piece Reel 2 V 1 8 V 3 G D 3 V 2 9 V 2 MAAM-010513-TR0500 500 Piece Reel G D 4 V 3 10 V 1 MAAM-010513-001SMB Sample Evaluation Board G D 5 No Connection 11 No Connection 6 No Connection 12 No Connection 2 Paddle Ground 1. MACOM recommends connecting unused package pins to ground. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM-010513 Amplifier, Driver Rev. V5 40.5 - 43.5 GHz Electrical Specifications: Freq: 40.5 - 43.5 GHz, T = 25C, VD = 4 V, ID1 = ID2 = 100 mA, ID3 = 200 mA A Parameter Units Min. Typ. Max. Small Signal Gain dB 19 23 27 Input Return Loss dB - 12 - Output Return Loss dB - 15 - Reverse isolation dB - 50 - Output P1dB dBm - 23 - Output IP3 dBm 27 32 - Saturated Output Power dBm 21 25 - 3 mA - 400 500 Quiescent Current 3. Adjust V between 1.0 and 0.1 V to achieve specified current. Typical 400 mA = 100 (ID1) + 100 (ID2) + 200 (ID3) g 4,5,6 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Max. damage: Drain Voltage +4.3 V Static Sensitivity Gate Bias Voltage -1.5V < Vg < 0V Gallium Arsenide Integrated Circuits are sensitive Input Power +10 dBm to electrostatic discharge (ESD) and can be 7 Junction Temperature 150C damaged by static electricity. Proper ESD control techniques should be used when handling these Operating Temperature -40C to +85C Human Body Model Class 1B and Machine Model Storage Temperature -55C to +150C Class A devices. 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with T 150C will ensure J 6 MTTF > 1 x 10 hours. 7. Junction Temperature (T ) = T + jc * (V * I) J C Typical thermal resistance ( jc) = 26 C/W. a) For T = 25C, C T = 67C 4 V, 400 mA J b) For T = 85C, C T = 127C 4 V, 400 mA J 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: