MAAM02350 Wide Band GaAs MMIC Amplifier Rev. V4 0.2 - 3.0 GHz Features Pad Layout High Gain: 19 dB Typical Output Power: +14 dBm Typical Noise Figure: 3.7 dB Typical RoHS* Compliant Description M/A-COMs MAAM02350 is a wide band, MMIC amplifier. It includes two integrated gain stages and employs resistive feedback to obtain flat gain and a g o o d , 5 0 o h m in p u t , a n d o u t p u t impedance match over a very wide bandwidth. The MAAM02350 operates from a single +6 V supply. It is fully monolithic. Die SizeInches (mm) The MAAM02350 functions well as a generic IF, driver or buffer amplifier where high gain, low noise 0.044 x 0.032 x 0.004 (1.140 x 0.820 x 0.102) figure, excellent linearity and low power consumption are important. Because of its wide bandwidth, the Outline Drawing MAAM02350 can be used in numerous commercial and government system applications, such as wireless communications, EW and radar. The MAAM02350 is manufactured in-house using a reliable, 0.5-micron, GaAs MESFET process. This product is 100% RF tested to ensure compliance to performance specifications. 1,2 Absolute Maximum Ratings Parameter Absolute Maximum V +7 V DD Input Power +20 dBm 3 Channel Temperature +150C Operating Temperature -55C to +100C Storage Temperature -65C to +150C 4,5 1. Exceeding any one or combination of these limits may cause Ordering Information permanent damage to this device. 2. M/A-COM does not recommend sustained operation near Part Number Package these survivability limits. 3. Typical thermal resistance (jc) = +80C/W. MAAM02350 DIE 4. Reference Application Note M538 for lead-free solder reflow recommendations. 5. Die quantity varies. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM02350 Wide Band GaAs MMIC Amplifier Rev. V4 0.2 - 3.0 GHz Electrical Specifications: T = 25C, V = +6 V, Z = 50 A DD 0 Parameter Test Conditions Units Min. Typ. Max. Gain 0.2 - 3.0 GHz, P = -30 dBm dB 17 19 IN Gain Flatness 0.2 - 3.0 GHz, P = -30 dBm dB 0.5 IN Noise Figure 0.2 - 3.0 GHz dB 3.7 4.1 Input VSWR 0.2 - 3.0 GHz, P = -30 dBm Ratio 1.8:1 IN Output VSWR 0.2 - 3.0 GHz, P = -30 dBm Ratio 1.5:1 IN Output 1 dB Compression 0.2 - 3.0 GHz dBm +14 OIP3 0.2 - 3.0 GHz, P = -30 dBm dBm 24 IN Reverse Isolation 0.2 - 3.0 GHz, P = -30 dBm dB 35 IN Bias Current mA 65 100 Schematic Typical Bias Configuration V S1 V V V G1 G2 DD DD V , V V , V G1 G2 DD DD S1 500 pF RF OUT RF IN RF IN RF OUT 100 pF 100 pF GND 1 GND 2 500 pF 500 pF Handling Procedures 6. Self-bias operation is obtained by connecting +6 volts to both Please observe the following precautions to avoid V and V pads, grounding pad S1, and connecting pads DD DD damage: GND1 and GND2 to separate bypass 500 pF MOS capacitors. Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: