MAAM26100-P1 GaAs MMIC Power Amplifier Rev. V7 2 - 6 GHz Features Functional Diagram Saturated Output Power: 30.5 dBm Typical Gain: 20 dB Typical Power Added Efficiency: 30% Typical On-Chip Bias Network DC Decoupled RF Input and Output V GND Lead-Free High Performance Ceramic Package DD GND RoHS* Compliant and 260C Reflow Compatible GND RF RF IN OUT Description GND GND The MAAM26100-P1 is a GaAs MMIC two stage GND GND V high efficiency power amplifier in a lead-free high GG performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design which eliminates the need for external circuitry in 50-ohm systems. The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in UMTS Pin Configuration applications, test equipment, electronic warfare jammers, missile subsystems and phased array Pin No. Function Pin No. Function radars. 1 GND 6 V GG The MAAM26100-P1 is fabricated using a mature 2 GND 7 GND 0.5-micron gate length GaAs process. The process 3 RF 8 RF IN OUT features full passivation for increased 4 GND 9 GND performance reliability. 5 GND 10 V DD 1,2 Absolute Maximum Ratings Ordering Information Part Number Package Parameter Absolute Maximum MAAM26100-P1 Ceramic Bolt Down V +9 V DD V -6 V to -3 V GG RF Input Power +17 dBm Channel Temperature 150C Storage Temperature -65C to +150C Thermal Resistance 15C/W (Channel to Case) 1. Exceeding any one or combination of these limits may cause permanent damage to this device and will void product warranty. 2. M/A-COM does not recommend sustained operation near these survivability limits. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM26100-P1 GaAs MMIC Power Amplifier Rev. V7 2 - 6 GHz 3,4 Lead-Free CR-15 Functional Schematic V DD 0.01 F 10 IN OUT 3 8 V GG 6 GND 1,2,4,5,7,9 3. Nominal bias is obtained by first connecting 5 volts to pin 6 (VGG), followed by connecting +8 volts to pin 10 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. Electrical Specifications: T = 25C, V = +8 V, V = -5 V A DD GG Parameter Test Conditions Units Min. Typ. Max. Small Signal Gain Pin < -10 dBm, 2-6 GHz dB 20 Input VSWR Pin < -10 dBm, 2-6 GHz Ratio - 1.8:1 2.1:1 Output VSWR Pin < -10 dBm, 2-6 GHz Ratio 2.2:1 Output Power Pin = +14 dBm, 2-6 GHz dBm 29 30.5 P1dB 2-6 GHz dBm 28 Power Added Efficiency Pin = +14 dBm, 2-6 GHz % 30 Output IP3 2-6 GHz dBm 40 IDS Pin = +14 dBm, 2-6 GHz mA 475 650 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: