MAAP-008924 Amplifier, Power, 1.2 W Rev. V1 10 - 13.3 GHz Features Functional Schematic OIP3: 44 dBm N/C N/C V 1 V 2 V 3 D D D Gain: 20 dB 20 16 P1dB: 31 dB Lead-Free 5 mm 20-lead PQFN Package Halogen-Free Green Mold Compound N/C N/C 1 15 RoHS* Compliant and 260C Reflow Compatible N/C N/C Class 1C ESD Rating RF RF IN OUT Description N/C N/C The MAAP-008924 is a 3-stage, high linearity 1.2 W GaAs power amplifier in a 5mm, 20 lead PQFN 5 11 N/C N/C package, allowing easy assembly. This PA product is fully matched to 50 ohms on both the input and 10 6 output. It can be used as a power amplifier stage or as a driver stage in high power applications. It is V 1 V 2 V 3 G G G N/C N/C ideally suited for Point-to-Point Radios. 2,3 Each device is 100% RF tested to ensure Pin Configuration performance compliance. The part is fabricated using M/A-COM Technology Solutions high linearity Pin No. Function Pin No. Function MESFET Process. 1 No Connect 11 No Connect 2 No Connect 12 No Connect 3 RF 13 RF IN OUT 4 No Connect 14 No Connect 1 Ordering Information 5 No Connect 15 No Connect Part Number Package 6 V 1 16 V 3 G D MAAP-008924-TR0500 500 piece reel 7 No Connect 17 No Connect MAAP-008924-TR1000 1000 piece reel 8 V 2 18 V 2 G D 9 No Connect 19 No Connect MAAP-008924-001SMB Sample Board 10 V 3 20 V 1 G D 1. Reference Application Note M513 for reel size information. 2. M/A-COM Technology Solutions recommends connecting unused package pins to ground. 3. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-008924 Amplifier, Power, 1.2 W Rev. V1 10 - 13.3 GHz 4 Electrical Specifications: Freq. 10 - 13.3 GHz, V = 6 V, I = 1000 mA , Z = 50 DD DQ 0 Parameter Test Conditions Units Min. Typ. Max. 10 GHz 21 Small Signal Gain 11.7 GHz dB 20 13.3 GHz 20 22 Input Return Loss dB 12 Output Return Loss dB 10 Noise Figure dB 7 P1dB dBm 31 10 GHz, 15 dBm / tone 42 OIP3 11.7 GHz, 15 dBm / tone dBm 44 13.3 GHz, 15 dBm / tone 39 41 P dBm 32 SAT Current, P = 31 dBm I mA 1100 OUT DD 4. Set V to 1.5 V prior to applying V once V is applied adjust V to achieve specific Idq. GG DD, DD GG 5,6 Maximum Operating Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid damage: Input Power +12 dBm Drain Supply Voltage +7 Volts Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive Operating Temperature -40C to +85C to electrostatic discharge (ESD) and can be 7,8 Junction Temperature +150C damaged by static electricity. Proper ESD control techniques should be used when handling these Storage Temperature -55C to +150C class 1C devices. 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 8. Junction Temperature (T ) = T + jc * ((V * I) - (P - P )) J C OUT IN Typical thermal resistance ( jc) = 9.1C/W. a) For T = 25C, C T = 74C 6 V, 1100 mA, P = 31 dBm, P = 11 dBm J OUT IN b) For T = 85C, C T =134C 6 V, 1100 mA, P = 31 dBm, P = 11 dBm J OUT IN 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: