MAAP-010169 10 W Power Amplifier V1 2 - 6 GHz Features Functional Schematic +41 dBm Saturated Output Power Linear Gain: 18 dB Power Added Efficiency: 30% at P SAT 50 Input / Output Match Ceramic Flange Mount Package RoHS* Compliant and 260C Re-flow Compatible MAAP-010169 Description The MAAP-010169 is a two stage MMIC power amplifier designed for broadband high power applications. It can be used as either a driver or an output stage amplifier. This device is fully matched input and output to 50 which eliminates any sensitive external RF tuning components. 2 Pin Configuration The device is packaged in a lead free 10-lead Pin No. Function flanged package for high volume manufacturing. 1 V 2 GG The MAAP-010169 is fabricated using a high 2 V 1 GG reliability pHEMT process, to realize good power added efficiency and gain. The pHEMT process 3 RF Input features full passivation for high performance and 4 V 1 GG reliability. 5 V 2 GG 6 V 1 DD 7 V 2 DD 1 8 RF Output Ordering Information 9 V 2 DD Part Number Package 10 V 1 DD MAAP-010169-000000 Bulk 2. Flange is DC and RF ground. 1. Reference Application Note M567 for package handling and mounting procedure. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be * Restrictions on Hazardous Substances, damaged by static electricity. Proper ESD control European Union Directive 2002/95/EC. techniques should be used when handling these devices. 1 1 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAAP-010169 10 W Power Amplifier V1 2 - 6 GHz Electrical Specifications: Freq. = 2 - 6 GHz, V = 10 V, I = 3.5 A, T = +25 C, Z = 50 DD DQ A 0 Parameter Test Conditions Units Min. Typ. Max. Gain dB 14 18 Input Return Loss dB 8 Output Return Loss dB 10 P1dB dBm 38 P dBm 40 SAT PAE P % 30 SAT Duty Cycle % 100 Gate Bias Voltage V -0.56 I 3.5 DQ Current A P 5.5 SAT 3,4,5 Recommended Bias Configuration Absolute Maximum Ratings Parameter Absolute Maximum RF OUT VDD VDD 0.1 to 1.0 F Input Power +26 dBm Operating Supply Voltage +11 Volts Operating Gate Voltage -2 V < V < 0 V GG 6 MAAP-010169 Operating Temperature -40C to +25C 7 Channel Temperature +150 C Storage Temperature -65C to +150C V V GG GG 3. Exceeding any one or combination of these limits may cause RFIN permanent damage to this device. 4. M/A-COM Technology Solutions does not recommend 0.1 to 1.0 F sustained operation near these survivability limits. 5. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 6. Operating temperatures >25C will require regulation of Operating the MAAP-010169 dissipated power to maintain T 150C. Refer to the J Max. Power Dissipation vs. Base Plate Temperature curve The MAAP-010169 is static sensitive. Please on page 6. handle with care. To operate the device, follow 7. Junction Temperature (T ) = T + * ((V * I) - (P - P )) J C JC OUT IN these steps. Ramp down or shutdown in reverse Typical thermal resistance ( ) = 2.8C/W JC order (gate bias on first and off last). All V pins GG a) For T = 25C, 4 GHz C should have the same voltage applied at all times. T = +130C +10 V, 5.3 A, P = 42 dBm, P = 24 dBm J OUT IN 1. Apply V (-1.5 V). GG 2. Apply V (10 V Typical). DD 3. Set I by adjusting V . DQ GG 4. Apply RF . IN 2 2 M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298