MAAP-011139-DIE Power Amplifier, 4 W Rev. V2 28.5 - 31.0 GHz Features Functional Diagram High Gain: 24 dB 30 GHz 2 3 4 5 6 7 8 P1dB: 34.5 dBm V GND V 1 V 2 V 3 GND V 4 G D D D D P : 36.5 dBm SAT IM3 Level: -27 dBc P = 29 dBm/tone OUT Power Added Efficiency: 23% P SAT Return Loss: 10 dB Bare Die Dimensions: 3.1 x 2.8 x 0.05 mm RoHS* Compliant 1 RFIN RF 9 OUT Description The MAAP-011139-DIE is a 4-stage, 4 W power amplifier in bare die form. This power amplifier Backside operates from 28.5 to 31.0 GHz and provides 24 dB GND of linear gain, 4 W saturated output power, and 23% V GND V 1 V 3 GND V 4 G D VD2 D D efficiency while biased at 6 V. 16 13 15 14 12 11 10 The MAAP-011139-DIE is a power amplifier ideally 2 suited for VSAT communications. Pin Configuration This product is fabricated using a GaAs pHEMT Pad Function Description device process which features full passivation for enhanced reliability. 1 RF RF Input IN 2, 16 V Gate Voltage G 3, 7, 11, 15 GND Ground & backside Ordering Information 4, 14 V 1 Drain Voltage 1 D Part Number Package 5, 13 V 2 Drain Voltage 2 D 1 MAAP-011139-DIE Die in Gel Pack 6, 12 V 3 Drain Voltage 3 D 1. Die quantity varies 8, 10 V 4 Drain Voltage 4 D 9 RF RF Output OUT 2. Backside metal is RF, DC and thermal ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011139-DIE Power Amplifier, 4 W Rev. V2 28.5 - 31.0 GHz 3 Electrical Specifications : Freq. = 30 GHz, T = +25C, V = +6 V, Z = 50 C D 0 Parameter Test Conditions Units Min. Typ. Max. Gain P = 0 dBm dB 22 24 IN P P = 17 dBm dBm 35.0 36.5 OUT IN IM3 Level P = 29 dBm / tone dBc -27 OUT Power Added Efficiency P (P = 17 dBm) % 23 SAT IN Input Return Loss P = -20 dBm dB 10 IN Output Return Loss P = -20 dBm dB 10 IN Quiescent Current I (see bias conditions, page 5 ) mA 2000 DQ Current P (P = +17 dBm) mA 3200 SAT IN 3. Specifications apply to MMIC die with two RF input and two RF output bond wires. 6,7 Maximum Operating Ratings Absolute Maximum Ratings Parameter Rating Parameter Absolute Maximum Input Power +17 dBm Input Power +23 dBm 4,5 Junction Temperature +160C Drain Voltage +6.5 V Operating Temperature -40C to +85C Gate Voltage -3 to 0 V 8 4. Operating at nominal conditions with junction temperature Junction Temperature +175C 6 +160C will ensure MTTF > 1 x 10 hours. Storage Temperature -65C to +150C 5. Junction Temperature (T ) = T + * ((V * I) - (P - P ) J C JC out IN Typical thermal resistance ( ) = 3.4C/W. JC 6. Exceeding any one or combination of these limits may cause a) For T = +25C, C permanent damage to this device. T = +75C 6 V, 3.2 A, P = 36.5 dBm, P = 17 dBm J OUT IN 7. MACOM does not recommend sustained operation near these b) For T = +85C, C survivability limits. T = +133C 6 V, 3.0 A, P = 36.0 dBm, P = 17 dBm J OUT IN 8. Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: