N/C N/C N/C N/C Vd2 Vd2 A B N/C Vg2 Vd1 N/C N/C Vg1 N/C N/C MAAP-011193 4 W Power Amplifier Rev. V1 7.7 - 8.5 GHz Features Functional Schematic 20 dB Small Signal Gain 46.5 dBm Third Order Intercept Point (OIP3) >36.5 dBm Saturated Output Power (P ) SAT Bias 2000 mA at 8 V Lead-Free 7mm Copper Coin Air Cavity Package 16 15 14 13 12 11 10 RoHS* Compliant Description The MAAP-011193 is a packaged linear power 1 9 RF RF amplifier that operates from 7.7 - 8.5 GHz. The IN OUT device provides 20 dB gain and 46.5 dBm Output Third Order Intercept Point (OIP3) with >35.5 dBm saturated output power (P ). SAT 2 3 4 5 6 7 8 The packaged amplifier comes in an air cavity 7 mm surface mount package with a copper coin paddle and is comprised of a two stage power amplifier MMIC. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the 3 packaged part. Pin Configuration Pin No. Function Pin No. Function The device is specifically designed for use in 8 GHz point-to-point radios for cellular backhaul 1 RF Input 9 RF Output applications. 2 No Connection 10 No Connection 3 Gate Stg1 Bias 11 No Connection 2 4 No Connection 12 Drain Stg2 Bias 1 Ordering Information 5 Gate Stg2 Bias 13 No Connection Part Number Package 2 6 Drain Stg2 Bias 14 Drain Stg1 Bias MAAP-011193 Bulk Quantity 7 No Connection 15 No Connection MAAP-011193-TR0500 500 Piece Reel 8 No Connection 16 No Connection MAAP-011193-001SMB Sample Board 2. Drain 2 Bias can be connected from either pins 6 or 12 3. The exposed pad centered on the package bottom must be 1. Reference Application Note M513 for reel size information. connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011193 4 W Power Amplifier Rev. V1 7.7 - 8.5 GHz 4 Electrical Specifications: Freq. = 7.7 - 8.5 GHz, V = 8 V, I = 2000 mA, T = +25C D DQ A Parameter Units Min. Typ. Max. Small Signal Gain dB 17 20 22.5 Input Return Loss dB 12 Output Return Loss dB 12 Power 1 dB Gain Compression, P1dB dB 35.5 Power 3 dB Gain Compression, P3dB dBm 36 Saturated Output Power, P dBm 35.5 36.5 SAT Output IP3, 25.5 dBm SCL Freq = 8.1 GHz dBm 43.5 46.5 Drain Bias voltage V 8.0 Drain Current mA 2000 Gate Voltage V -1.5 -0.5 4. Adjust V and V between -1.2 and -0.7 V to achieve specified I (I =I +I ). V and V should be the same voltage. G1 G2 DQ DQ D1 D2 G1 G2 5,6,7 Handling Procedures Absolute Maximum Ratings Please observe the following precautions to avoid Parameter Absolute Max. damage: Input Power 25 dBm Static Sensitivity Drain Voltage (V 1,2) +9 V D Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be Gate Voltage (V 1,2) -3 V G damaged by static electricity. Proper ESD control techniques should be used when handling these Continuous Power Class 1A HBM devices. 33.3 W Dissipation 85C Junction Temperature +175C (max.) Junction Temperature +150C Operating Temperature -40C to +85C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with T 150C will ensure J 6 MTTF > 1 x 10 hours. Channel temperature should be kept as low as possible to maximize lifetime. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: