X-On Electronics has gained recognition as a prominent supplier of MAAP-011250-TR0500 RF Amplifier across the USA, India, Europe, Australia, and various other global locations. MAAP-011250-TR0500 RF Amplifier are a product manufactured by MACOM. We provide cost-effective solutions for RF Amplifier, ensuring timely deliveries around the world.

MAAP-011250-TR0500 MACOM

MAAP-011250-TR0500 electronic component of MACOM
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Part No.MAAP-011250-TR0500
Manufacturer: MACOM
Category: RF Amplifier
Description: RF Amplifier Power Amplifier,27.5-30.0GHz,4W,5mmAQFN
Datasheet: MAAP-011250-TR0500 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
500: USD 87.8553 ea
Line Total: USD 43927.65 
Availability - 0
MOQ: 500  Multiples: 500
Pack Size: 500
Availability Price Quantity
0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 500
Multiples : 500
500 : USD 102.5573

0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 119.6488
10 : USD 108.3005
25 : USD 101.7369
100 : USD 98.455

0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 119.6488
10 : USD 108.3005
25 : USD 101.7369
100 : USD 98.455

0
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 500
Multiples : 500
500 : USD 87.8553

0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 2
Multiples : 1
2 : USD 111.3656

0
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 2
Multiples : 1
2 : USD 104.717

   
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We are delighted to provide the MAAP-011250-TR0500 from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAAP-011250-TR0500 and other electronic components in the RF Amplifier category and beyond.

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MAAP-011250 Power Amplifier, 4 W Rev. V2 27.5 - 30 GHz Features Functional Schematic High Gain: 24 dB P1dB: 34.8 dBm P3dB: 36 dBm 32 31 30 28 26 25 29 27 IM3 Level: -23 dBc POUT = 30 dBm/tone GND 1 GND Power Added Efficiency: 20% P3dB 24 Temperature Compensated Output Power N/C 2 23 N/C Detector 3 GND GND 22 Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant RF 4 RF IN 21 OUT N/C 5 20 GND Description N/C 6 19 DET The MAAP-011250 is a balanced 4 W, 4-stage power amplifier assembled in a lead-free 5 mm N/C 7 18 NC 32-lead AQFN plastic package. This power amplifier GND 8 17 GND operates from 27.5 to 30 GHz and provides 24 dB of linear gain, 4 W saturated output power and 20 % 11 13 14 15 9 10 12 16 efficiency while biased at 6 V. The MAAP-011250 can be used as a power amplifier stage or as a driver stage in higher power applications. This device is ideally suited for VSAT 3,4 Pin Configuration and 28 GHz PTP applications. Pin Pin Name Description This product is fabricated using a GaAs pHEMT process which features full passivation for enhanced 1, 3, 8, 9, 16, 17, GND Ground reliability. 20, 22, 24, 25, 32 2, 5, 6, 7, 13, N/C No Connection 18, 23, 30 4 RF RF Input IN 10, 11, 31 V Gate Voltage G 12, 29 V Drain Voltage 1 D1 1,2 Ordering Information 14, 27, 28 V Drain Voltage 2 D2 15, 26 V Drain Voltage 3 D3 Part Number Package 19 DET Detector MAAP-011250-TR0500 500 Piece Reel 21 RF RF Output MAAP-011250-SMB Sample Board OUT 1. Reference Application Note M513 for reel size information. 3. MACOM recommends connecting all No Connection (N/C) 2. All sample boards include 3 loose parts. pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-011250 Power Amplifier, 4 W Rev. V2 27.5 - 30 GHz Electrical Specifications: Freq. = 27.5 & 30 GHz, T = +25C, V = 6 V, Z = 50 A D 0 Parameter Test Conditions Units Min. Typ. Max. P = 0 dBm, 27.5 GHz 21.0 26.0 IN Gain dB P = 0 dBm, 30.0 GHz 21.0 24.5 IN P = 14.5 dBm, 27.5 GHz 34.5 37.0 5 IN P dBm OUT P = 15.0 dBm, 30.0 GHz 34.5 36.0 IN P = 30 dBm / tone OUT IM3 dBc -23 Freq. = 27.5 - 30 GHz P = 14.5 dBm IN Power Added Efficiency % 20 Freq. = 27.5 - 30 GHz P = -20 dBm IN Input Return Loss dB 15 Freq. = 27.5 - 30 GHz P = -20 dBm IN Output Return Loss dB 15 Freq. = 27.5 - 30 GHz Quiescent Current I (see bias conditions, page 4 ) mA 2300 DSQ Drain Current (VD1 + VD2 + VD3) P = 14.5 dBm mA 3600 4300 IN 5. MACOM does not recommend sustained operation at power levels above 3 dB gain compression. 8,9 Maximum Operating Ratings Absolute Maximum Ratings Parameter Rating Parameter Absolute Maximum 5 Input Power 15 dBm Input Power 17.5 dBm 6,7 Junction Temperature +160C Drain Voltage +6.5 V Operating Temperature -40C to +85C Gate Voltage -3 to 0 V 10 6. Operating at nominal conditions with junction temperature Junction Temperature +175C 6 +160C will ensure MTTF > 1 x 10 hours. 7. Junction Temperature (T ) = T + * ((V * I) - (P - P )) Storage Temperature -65C to +125C J C JC OUT IN Typical thermal resistance ( ) = 4C/W. JC 8. Exceeding any one or combination of these limits may cause a) For T = +25C C T = +88C 6 V, 3.3 A, P = 36 dBm, P = 14.5 dBm permanent damage to this device. J OUT IN 9. MACOM does not recommend sustained operation near these b) For T = +85C C T = 146C 6 V, 3.0 A, P = 34.5 dBm, P = 14.5 dBm survivability limits. J OUT IN 10.Junction temperature directly effects device MTTF. Junction temperature should be kept as low as possible to maximize Handling Procedures lifetime. Please observe the following precautions to avoid damage: Static Sensitivity These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A 22 2 devices. MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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M/A-COM
M/A-COM / TYCO
M/A-COM Technology Solutions
MA/COM
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