MAAP-015024-DIE MACOM

MAAP-015024-DIE Power Amplifier, 8 W Rev. V6 14.5 - 17.5 GHz Features Functional Schematic 8 W Power Amplifier V 1 V 1 V 2 V 2 V 3 V 3 G D G D G D 20 dB Small Signal Gain 13 1 3 6 9 11 39 dBm Saturated Pulsed Output Power Dual Sided Bias Architecture 100% On-wafer DC & RF Power Tested 100% Visual Inspection to MIL-STD-833 Bare Die 14 RF 28 RF OUT IN Description The MAAP-015024-DIE three stage 14.5 - 17.5 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 39 dBm and a small signal gain of 20 dB. The power amplifier must be biased directly on both sides of the die. 25 19 17 15 27 22 This MMIC uses MACOMs GaAs pHEMT device V 1 V 1 V 2 V 2 V 3 V 3 G D G D G D technology and is based upon optical gate lithography to ensure high repeatability and Pad Configuration uniformity. The chip has surface passivation for protection and backside via holes and gold Pad Function Description metallization to allow a conductive epoxy die attach st process. 1 V 1 1 Stage Gate Voltage G st This device is well suited for communication and 3 V 1 1 Stage Drain Voltage D radar applications. nd 6 V 2 2 Stage Gate Voltage G nd 9 V 2 2 Stage Drain Voltage D rd 11 V 3 3 Stage Gate Voltage G rd 13 V 3 3 Stage Drain Voltage D 14 RF RF Output OUT Ordering Information rd 15 V 3 3 Stage Drain Voltage D rd Part Number Package 17 V 3 3 Stage Gate Voltage G Die in vacuum release gel nd MAAP-015024-DIE 19 V 2 2 Stage Drain Voltage D pack nd 22 V 2 2 Stage Gate Voltage G MAAP-015024-DIER Diced Wafer on Grip Ring ST 25 V 1 1 Stage Drain Voltage D Direct gate bias sample MAAP-015024-DIEEV1 board st 27 V 1 1 Stage Gate Voltage G On chip gate bias sample MAAP-015024-DIEEV2 28 RF RF Input board IN * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-015024-DIE Power Amplifier, 8 W Rev. V6 14.5 - 17.5 GHz Electrical Specifications: Freq. = 14.5 - 17.5 GHz, T = +25C, Duty Cycle = 5%, P = 23 dBm A IN Parameter Units Min. Typ. Max. Gain dB 21.0 Gain Flatness dB +/-1.0 Input Return Loss dB 10.0 Output Return Loss dB 6.0 Reverse Isolation dB 50.0 Saturated Output Power 14.5 - 15.0 GHz dBm 35.0 37.5 15.0 - 17.5 GHz 37.5 39.0 Drain Bias Voltage V 8.0 Gate Bias Voltage V -0.9 Current A 5.0 7.0 1,2 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Input Power 30 dBm Gate Voltage -0.5 V < V < -2 V G Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to Supply Voltage 8.5 Vdc electrostatic discharge (ESD) and can be damaged Supply Current 7.5 A by static electricity. Proper ESD control techniques Storage Temperature -65C to +165C should be used when handling these devices. Operating Temperature -40C to +85C 3 Junction Temperature +175C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. Operating at nominal conditions with T +175C will ensure J 6 MTTF > 1 x 10 hours. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: