MAAP-015030-DIEEV1 MACOM

MAAP-015030-DIE Power Amplifier, 13 W Rev. V5 8.5 - 11.75 GHz Functional Schematic Features 12 W X-Band Power Amplifier 21 dB Large Signal Gain V 1 V 2 V 2 V 1 V 2 B B G D D 41 dBm Saturated Pulsed Output Power 4 5 7 8 9 40% Power Added Efficiency V 1 1 G 6 Bias On Chip Gate Bias Circuit 2 100% On-wafer DC & RF Power Tested 100% Visual Inspection to MIL-STD-833 Bare Die 11 RF 22 OUT RF IN Description The MAAP-015030-DIE two stage 8.5 - 11.75 GHz 20 Bias GaAs MMIC power amplifier has a saturated pulsed 16 21 V 1 G 13 output power of 41 dBm and a large signal gain of 14 18 17 15 21 dB. The power amplifier can be biased using a V 1 V 2 V 2 V 1 V 2 B B G D D direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and Pad Configuration radar applications. Pad Function Pad Function 1 V 1 12 GND G 2 Bias Circuit GND 13 V 2 D 3 No Connection 14 V 1 D 4 V 1 15 V 2 B G 5 V 2 16 Bias Circuit GND B Ordering Information 6 Bias Circuit GND 17 V 2 B Part Number Package 7 V 2 18 V 1 G B Die in Vacuum release gel 8 V 1 19 GND D MAAP-015030-DIE pack 9 V 2 20 Bias Circuit GND D Direct gate bias sample MAAP-015030-DIEEV1 board 10 GND 21 V 1 G On chip gate bias sample MAAP-015030-DIEEV2 11 RF 22 RF OUT IN board * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-015030-DIE Power Amplifier, 13 W Rev. V5 8.5 - 11.75 GHz Electrical Specifications: Freq. = 8.5 - 11.5 GHz, T = +25C, Duty Cycle = 5%, P = 20 dBm, V = -0.9 V A IN G Parameter Test Conditions Units Min. Typ. Max. 8.5 - 11.5 GHz 20 Gain (Large Signal) dB 21 11.5 - 11.75 GHz 19 Gain dB 25 Gain Flatness dB 1 Input Return Loss dB 12 Output Return Loss dB 10 8.5 - 11.5 GHz 40 Saturated Output Power dBm 41 11.5 - 11.75 GHz 39 8.5 - 9.0 GHz 35 Power Added Efficiency 9.0 - 10.0 GHz % 40 10.0 - 11.75 GHz 40 Drain Bias Voltage V 8.0 Drain Current A 5 5.5 1,2 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Input Power 23 dBm Drain Voltage 8.5 V Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to Gate Voltage -2.0 V < V < -0.7 V G electrostatic discharge (ESD) and can be damaged Bias Voltage -6.5 V < V < -4.5 V B by static electricity. Proper ESD control techniques Drain Current < 6.0 A should be used when handling these devices. Gate Current < 30 mA Operating Temperature -40C to +85C 3,4 Junction Temperature +175C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. 3. Operating at nominal conditions with T +175C will ensure J 6 MTTF > 1 x 10 hours. 4. Junction Temperature (T ) = T + jc * (V * I) J A Typical thermal resistance ( jc) = 5.7C/W. a) For T = 25C, A T = 175C 8 V, 3.29 A J b) For T = 85C, A T = 175C 8 V, 1.97 A J 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: