MAAP-015036 Power Amplifier, 15 W Rev. V1 8.5 - 10.5 GHz Features Functional Schematic 15 W Power Amplifier 42 dBm Saturated Pulsed Output Power 17 dB Large Signal Gain P >40% Power Added Efficiency SAT Dual Sided Bias Architecture On Chip Bias Circuit 100% On-Wafer DC, RF and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Description The MAAP-015036 is a two stage GaAs MMIC power amplifier operating from 8.5 - 10.5 GHz, with a saturated pulsed output power of 42 dBm and a large signal gain of 18 dB. 2 Pin Configuration This power amplifier uses GaAs pHEMT device technology and is based upon optical gate lithography to ensure high repeatability and 1 V 1 15 V 2 G D uniformity. The chip has surface passivation for 2 GND 16 GND protection and backside via holes and gold metallisation to allow a conductive epoxy die attach 3 V 1 17 GND SS process. 4 V 18 V 1 1 5 D This device is well suited for communications, Point to Point radio and radar applications. 5 GND 19 V 2 G 6 V 2 20 GND SS 7 V 21 V 2 5 2 5 8 GND 22 V 2 SS 9 V 2 23 GND Ordering Information G 10 V 1 24 V D 1 5 11 GND 25 V 1 1 SS MAAP-015036-DIE Die in Gel Pack 12 GND 26 GND Sample Board MAAP-015036-DIEEV1 Direct Gate Bias 13 V 2 27 V 1 D G Sample Board MAAP-015036-DIEEV2 14 RF 28 RF OUT IN On-Chip Gate Bias 2. Backside metal is RF, DC and thermal ground. 1. Die quantity varies. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 11 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAP-015036 Power Amplifier, 15 W Rev. V1 8.5 - 10.5 GHz Electrical Specifications - Pulsed Operation: Duty Cycle = 5%, Pulse = 5 s, Freq. = 8.5 - 10.5 GHz, T = +25C, Z = 50 , , P = 26 dBm, V = -0.9 V A 0 IN G Gain (Large Signal) dB 17 Gain dB 17 Gain Flatness dB 1 Input Return Loss dB -15 Output Return Loss dB -25 Saturated Output Power (8.5 - 10.5 GHz) 40.5 dBm 42 Saturated Output Power (9.0 - 10.0 GHz) 41.0 Power Added Efficiency 8.5 - 9.0 GHz 45 % 9.0 - 10.0 GHz 45 10.0 - 10.5 GHz 43 Drain Bias Voltage V 8.0 Drain Current A 3.5 4.8 5.5 3,4 Absolute Maximum Ratings Input Power 30 dBm Handling Procedures Drain Voltage +8.5 V Please observe the following precautions to avoid Gate Voltage -3.0 V < V < -0.0 V G damage: Bias Voltage -6.0 V < V < -4.0 V SS Static Sensitivity Drain Current 6 A These electronic devices are sensitive to Gate Current (Direct Bias) 160 mA electrostatic discharge (ESD) and can be damaged Gate Current by static electricity. Proper ESD control techniques 165 mA (On Chip Bias) should be used when handling these HBM Class 1A devices. Operating Temperature -40C to +85C 5,6 Junction Temperature +170C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with T +160C will ensure J 6 MTTF > 1.0 x 10 hours. 6. Typical thermal resistance ( jc) = 5.7C/W. 2 22 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: