MAGX-011086
GaN on Silicon General Purpose Amplifier
Rev. V3
DC - 6 GHz, 28 V, 4 W
Features
GaN on Si HEMT D-Mode Amplifier
Suitable for Linear & Saturated Applications
Tunable from DC - 6 GHz
28 V Operation
9 dB Gain @ 5.8 GHz
45% Drain Efficiency @ 5.8 GHz
100% RF Tested
Thermally-Enhanced 4 mm 24-Lead QFN
RoHS* Compliant
Description
Functional Schematic
The MAGX-011086 is a GaN on silicon HEMT
amplifier optimized for DC - 6 GHz operation in a
N/C N/C N/C N/C N/C N/C
user friendly package ideal for high bandwidth
24 23 22 21 20 19
applications. The device has been designed for
saturated and linear operation with output power
1 18 N/C
N/C
levels of 4 W (36 dBm) in an industry standard, low
inductance, surface mount QFN package. The pads
2 17 N/C
N/C
of the package form a coplanar launch that naturally
absorbs lead parasitics and features a small PCB
3 16 RF / V
RF / V OUT D
IN G
Input
outline for space constrained applications.
Match
4 15 RFOUT / VD
RF / V
IN G
The MAGX-011086 is ideally suited for Wireless
5 14 N/C
N/C
25
LAN, High Dynamic Range LNAs, broadband
general purpose, land mobile radio, defense Paddle
6 13 N/C
N/C
communications, wireless infrastructure, and ISM
applications.
7 8 9 10 11 12
N/C N/C N/C N/C N/C N/C
Built using the SIGANTIC process - a proprietary
GaN-on-Silicon technology.
2
Pin Configuration
Pin # Pin Name Function
1 - 2 N/C No Connection
1
Ordering Information
3 - 4 RF / V RF Input / Gate
IN G
Part Number Package 5 -14 N/C No Connection
MAGX-011086 Bulk Quantity 15 - 16 RF / V RF Output / Drain
OUT D
MAGX-011086-TR0500 500 piece reel 17 - 24 N/C No Connection
3
MAGX-011086-SMB2 Sample Board 25 Paddle Ground / Source
2. All no connection pins may be left floating or grounded.
1. Reference Application Note M513 for reel size information.
3. The exposed pad centered on the package bottom must be
connected to RF and DC ground and provide a low thermal
resistance heat path.
* Restrictions on Hazardous Substances, compliant to current RoHS EU directive.
11
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
MAGX-011086
GaN on Silicon General Purpose Amplifier
Rev. V3
DC - 6 GHz, 28 V, 4 W
RF Electrical Specifications: T = 25C, V = 28 V, I = 50 mA
A DS DQ
Parameter Test Conditions Symbol Min. Typ. Max. Units
Small Signal Gain CW, 5.8 GHz G - 11 - dB
SS
Saturated Output Power CW, 5.8 GHz P - 37 - dBm
SAT
Drain Efficiency at Saturation CW, 5.8 GHz h - 50 - %
SAT
Power Gain 5.8 GHz, P = 4 W G 8 9 - dB
OUT P
Drain Efficiency 5.8 GHz, P = 4 W h 40 45 - %
OUT
Ruggedness: Output Mismatch All phase angles Y VSWR = 10:1, No Device Damage
DC Electrical Characteristics: T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
Drain-Source Leakage Current V = -8 V, V = 100 V I - - 2 mA
GS DS DLK
Gate-Source Leakage Current V = -8 V, V = 0 V I - - 1 mA
GS DS GLK
Gate Threshold Voltage V = +28 V, I = 2 mA V -2.5 -1.5 -0.5 V
DS D T
Gate Quiescent Voltage V = +28 V, I = 50 mA V -2.1 -1.2 -0.3 V
DS D GSQ
On Resistance V = +2 V, I = 15 mA R - 2.0 - W
DS D ON
Saturated Drain Current V = 7 V, Pulse Width 300 s I - 1.4 - A
DS D(SAT)
22
2
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: