MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor Rev. V1 15 W, DC - 3.5 GHz Features MAGX-000035-015000 (Flanged) GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation MTTF = 600 years (T < 200C) J Primary Applications Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX) Air Traffic Control Radar - Commercial Weather Radar - Commercial Military Radar - Military MAGX-000035-01500S (Flangeless) Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Description The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for todays demanding application needs. Ordering Information The MAGX-000035-01500X is constructed using a Part Number Description thermally enhanced flanged (Cu/W) or flangeless (Cu) ceramic package which provides excellent MAGX-000035-015000 Flanged, Bulk Packaging thermal performance. High breakdown voltages allow for reliable and stable operation in extreme MAGX-000035-01500S Flangeless, Bulk Packaging mismatched load conditions unparalleled with older semiconductor technologies. Sample Board MAGX-L20035-015000 (1.2 - 1.4 GHz, Flanged) Sample Board MAGX-L20035-01500S (1.2 - 1.4 GHz, Flangeless) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1 1 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor Rev. V1 15 W, DC - 3.5 GHz 1 Electrical Specifications : Freq. = 1.2 - 1.4 GHz, T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: V = 50 V, I = 15 mA, 1 ms Pulse, 10% Duty DD DQ Output Power P = 0.5 W P 15.0 17.7 - W IN OUT Power Gain P = 0.5 W G 14.8 15.5 - dB IN P Drain Efficiency P = 0.5 W 55 63 - % IN D Droop P = 0.5 W Droop - 0.1 0.4 dB IN Load Mismatch Stability P = 0.5 W VSWR-S - 5:1 - - IN Load Mismatch Tolerance P = 0.5 W VSWR-T - 10:1 - - IN Electrical Characteristics: T = 25C A Parameter Test Conditions Symbol Min. Typ. Max. Units DC Characteristics Drain-Source Leakage Current V = -8 V, V = 175 V I - - 750 A GS DS DS Gate Threshold Voltage V = 5 V, I = 2 mA DS D V -5 -3 -2 V GS (TH) Forward Transconductance V = 5 V, I = 500 mA G 0.35 - - S DS D M Dynamic Characteristics Input Capacitance V = 0 V, V = -8 V, F = 1 MHz DS GS C - 4.4 - pF ISS Output Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 1.9 - pF DS GS OSS Reverse Transfer Capacitance V = 50 V, V = -8 V, F = 1 MHz C - 0.2 - pF DS GS RSS Correct Device Sequencing Turning the device ON 1. Set V to the pinch-off (V ), typically -5 V. GS P 2. Turn on V to nominal voltage (+50V). DS 3. Increase V until the I current is reached. GS DS 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease V down to V GS P. 3. Decrease V down to 0 V. DS 4. Turn off V GS. 1. Electrical Specifications measured in MACOM RF evaluation board. 2 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. North America Tel: 800.366.2266 / Fax: 978.366.2266 Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298