MAMX-011023 Low Noise Active Mixer Rev. V2 4 - 23 GHz Features Functional Schematic Down Frequency Mixer Conversion Gain: 9 dB 12 GHz Low Noise: 7 dB 12 GHz Low Power Consumption: 3 V / 15 mA V 1 6 LO/RF G RF Frequency: 5 - 25 GHz LO Frequency: 4 - 23 GHz IF Frequency: DC - 8 GHz N/C 2 5 N/C Single Positive Power Supply Lead-Free 1.5 x 1.2 mm TDFN 6-lead Package Halogen-Free Green Mold Compound IF/V 3 4 N/C D o RoHS* Compliant and 260 C Reflow Description The MAMX-011023 is a low noise active mixer 3 assembled in a lead-free 1.5 x 1.2 mm TDFN 6-lead Pin Configuration plastic package. It is used for down frequency conversion, has an ultra wideband IF bandwidth of Pin No. Pin Name Description 8 GHz, and has the LO and RF driving the same pin. 1 V Gate Voltage G This mixer can be used for either lower sideband 2 N/C No Connection (LSB) or upper sideband (USB) mixing. 3 IF/V IF Port/ Drain Voltage D Features of this mixer include unconditional stability, very low LO drive (<0 dBm) and low DC bias 4 N/C No Connection (< 50 mW). Typically the IF pin is set to 3 V and 5 N/C No Connection draws 15 mA when the LO drive is on. Typically the V pin is set to 0.6 V. This mixer achieves very low G 6 RF & LO RF & LO Port noise figure for an active mixer. 4 7 Paddle Ground 3. MACOM recommends connecting No Connection pins to ground. 1,2 4. The exposed pad centered on the package bottom must be Ordering Information connected to RF, DC and thermal ground. Part Number Package MAMX-011023-TR3000 3000 piece reel MAMX-011023-SMB Sample Board 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAMX-011023 Low Noise Active Mixer Rev. V2 4 - 23 GHz Electrical Specifications: T = +25C, V = 3.0 V, V = 0.6 V, Z = 50 , A D G 0 IF Freq. = 2 GHz, LO Drive = -2 dBm 10 GHz , RF Freq. = 12 GHz Parameter Test Conditions Units Min. Typ. Max. 6 GHz 4 Gain 12 GHz dB 7 9 20 GHz 3 6 GHz 8 Noise Figure 12 GHz dB 7 20 GHz 10 RF Return Loss 5 - 25 GHz dB 8 IF Return Loss DC - 8 GHz dB 2 Lower Sideband +5 Input IP3 dBm Upper Sideband +8 LO to IF 13 LO Isolation 2LO to IF dB 85 3LO to IF 100 Bias Current V mA 15 D Bias Current V mA 0.5 G 5,6 Absolute Maximum Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid damage: Total Input Power (RF+LO) 15 dBm Static Sensitivity Drain Voltage 4 V / 35 mA Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be Gate Voltage 1.5 V damaged by static electricity. Proper ESD control techniques should be used when handling these 7 Junction Temperature +150C Class 1A (HBM) devices. Operating Temperature -40C to +85C Storage Temperature -65C to +150C 5. Exceeding any one or combination of these limits may cause permanent damage to this device. 6. MACOM does not recommend sustained operation near these survivability limits. 7. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: