This part is not recommended for new designs. Please refer to part number NPA1008A for a form, fit and function alternative. GaN Amplifier 28 V, 5 W 20 - 2700 MHz NPA1008 Rev. V5 Features GaN on Si HEMT D-Mode Integrated Amplifier Suitable for Linear & Saturated Applications Broadband Operation from 20 - 2700 MHz 50 Input Matched 28 V Operation 45% Drain Efficiency 100% RF Tested Lead-Free 4 mm 24-lead PQFN Package Functional Schematic Halogen-Free Green Mold Compound RoHS* Compliant N/C N/C N/C N/C N/C N/C 24 23 22 21 20 19 Description 1 18 N/C V The NPA1008 is an integrated GaN on silicon power G amplifier optimized for 20 - 2700 MHz operation. 2 17 N/C N/C This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) 3 16 RF / V RF OUT D IN assembled in a lead-free 4 x 4 mm 24-lead QFN Input plastic package. Match 4 15 RF / V OUT D RF IN The NPA1008 is ideally suited for general purpose 5 14 N/C N/C 25 narrowband to broadband applications in test and measurement, defense communications, land Paddle 6 13 N/C N/C mobile radio and wireless infrastructure. 7 8 9 10 11 12 N/C N/C N/C N/C N/C N/C Pin Designations 1 V Gate - DC Bias G 1 2 N/C No Connection 3,4 RF RF Input IN Ordering Information 1 5-14 N/C No Connection Part Number Package 15,16 RF / V RF Output / Drain OUT D 1 NPA1008 Bulk Quantity 17-24 N/C No Connection 2 NPA1008-SMB Sample Board 25 Paddle Ground / Source 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: This part is not recommended for new designs. Please refer to part number NPA1008A for a form, fit and function alternative. GaN Amplifier 28 V, 5 W 20 - 2700 MHz NPA1008 Rev. V5 RF Electrical Specifications: T = 25C , V = 28 V, I = 88 mA C DS DQ Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 1900 MHz G - 15.6 - dB SS Gain CW, P = 37 dBm, 1900 MHz G 10.5 12.0 - dB OUT P Saturated Output Power CW, 1900 MHz P - 38.9 - dBm SAT Drain Efficiency CW, 1900 MHz 44 47.0 - % SAT Power Added Efficiency CW, P = 37 dBm, 1900 MHz PAE - 44.7 - % OUT Ruggedness All phase angles VSWR = 15:1, No Device Damage DC Electrical Specifications: T = 25C C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current V = -8 V, V = 100 V I - 4 - mA GS DS DLK - - Gate-Source Leakage Current V = -8 V, V = 0 V I 2 mA GS DS GLK Gate Threshold Voltage V = 28 V, I = 4 mA V -2.5 -1.5 -0.5 V DS D T Gate Quiescent Voltage V = 28 V, I = 88 mA V -2.1 -1.2 -0.3 V DS D GSQ On Resistance V = 2 V, I = 45 mA R - 1.2 - DS D ON Saturated Drain Current V = 7 V pulsed, pulse width 300 s I - 2.3 - A DS D(SAT) 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: