SMS201 Silicon Schottky Diode Rev. V1 Features Small Footprint, only 50 x 30 mils. Simplest Broadband Detector as no DC bias Required Very Low Barrier Height, Good Sensitivity, -54 dBm, also Low Flick Noise Very Low Parasitic Package Inductance and Low Package Capacitance RoHS* Compliant Description Case 0503 - Molded Plastic DFN Package The SMS201 is a silicon Schottky diode in a molded plastic DFN package. It is designed for a broadband zero bias detector. It has a high cutoff frequency and can be used beyond 26.5 GHz for power detection up to 10 dBm. Electrical Specifications: T = +25C A Parameter Test Conditions Units Min. Typ. Max. Breakdown Voltage (V ) I = 100 A V 1 B R Forward Voltage (V ) I = 100 A mV 60 80 120 F F Total Capacitance (C ) V = 0 V, 6 - 8 GHz pF 0.08 0.10 T R Video Resistance (R ) I = 50 mA 2000 4000 8000 V F Tangential Signal Sensitivity (T ) NF -3 dB, 10 GHz dBm -54 SS Voltage Sensitivity (y) P = -30 dBm, Video BW = 500 KHz, 10 GHz mV/mW 8000 IN Absolute Maximum Ratings Parameter Absolute Maximum Handling Procedures Please observe the following precautions to avoid Reverse DC Voltage 1 V damage: Forward Current 20 mA Static Sensitivity 100 mW Dissipated Power (de-rated to 0 +175C) These electronic devices are sensitive to electrostatic discharge (ESD) and can be damaged Junction Temperature +175C by static electricity. Proper ESD control techniques should be used when handling these (HBM) Class 0 Storage Temperature -65C to +150C devices. +260C Solder Temperature per JEDEC J-STD-20C * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: SMS201 Silicon Schottky Diode Rev. V1 Typical RF Performance: T = +25C, Z = 50 A O Small Signal Capacitance vs. Frequency Typical Dynamic Transfer Characteristics: R = 10 m , F = 10 GHz L O Output Voltage vs. Input Power 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: