XB1008-QT Buffer Amplifier Rev. V2 10 - 21 GHz Features Functional Block Diagram Excellent Transmit LO/Output Buffer Stage GND GND GND V D 17 dB Small Signal Gain 20 dBm Psat 16 15 14 13 32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias 1 12 GND GND 100% RF, DC and Output Power Testing GND 2 11 GND Lead-Free 3 mm 16-Lead QFN Package RoHS* Compliant RF 3 10 RF IN OUT Description GND 4 9 GND The XB1008-QT is a two stage 10 - 21 GHz GaAs MMIC buffer amplifier that has a small signal gain of 17 dB with a 18 dBm P1dB output compression 5 6 7 8 point. The device also provides variable gain V GND GND GND G regulation with adjustable bias. The device is ideally suited as an LO or RF buffer Pin Configuration stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3 mm Pin No. Function QFN surface mount package offering excellent RF 1-2, 4, 6-9, 11, 12, 14-16 Ground and thermal properties. This device is specifically designed for use in PtP radio applications and is well 3 RF Input suited for other telecom applications such as SATCOM and VSAT. 5 Gate Bias 10 RF Output 13 Drain Bias 1 Ordering Information 2 Paddle Ground Part Number Package 2. The exposed pad centered on the package bottom must be XB1008-QT-0G0T tape and reel connected to RF, DC and thermal ground. XB1008-QT-EV1 evaluation module 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XB1008-QT Buffer Amplifier Rev. V2 10 - 21 GHz Electrical Specifications: 10 - 21 GHz, T = +25C A Parameter Units Min. Typ. Max. Input Return Loss (S11) dB 12 Output Return Loss (S22) dB 12 Small Signal Gain (S21) dB 17 Gain Flatness ( S21) dB +/-2 Reverse isolation (S12) dB 65 Noise Figure dB 4.5 Output Power for 1dB Compression Point (P1dB) dBm 18 Saturated Output Power (P ) dBm 20 SAT Output Third Order Intercept dBm 32 Drain Bias Voltage (V ) VDC 4 4 D Gate Bias Voltage (V ) VDC -1.0 -0.23 -0.1 G Supply Current (I ) (V = +4.0 V, V 2 = -0.5 V Typical) mA 100 130 D D G 3 Absolute Maximum Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid damage: Supply Voltage 4.3 VDC Supply Current 180 mA Static Sensitivity These electronic devices are sensitive to Gate Bias Voltage 0 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Input Power 20 dBm should be used when handling these HBM Class 1A Storage Temperature -65C to +165C devices, MM Class A devices. Operating Temperature -55C to +85C Channel Temperature 150C 3. Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: