XL1000-BD-000V MACOM

XL1000-BD Low Noise Amplifier Rev. V2 20 - 40 GHz Chip Device Layout Features Self Bias Architecture Small Size 3 or 5 V Operation 20 dB Small Signal Gain 2 dB Noise Figure 9 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010 RoHS* Compliant and 260C Reflow Compatible Description The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band. This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. Ordering Information Part Number Package This device is well suited for Millimeter-wave Point-to -Point Radio, LMDS, SATCOM and VSAT V - vacuum release XL1000-BD-000V applications. gel paks 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XL1000-BD Low Noise Amplifier Rev. V2 20 - 40 GHz Electrical Specifications: Freq. = 20 - 40 GHz, V = 5 V, I = 50 mA, T = +25C D D A Parameter Test Conditions Units Min. Typ. Max. Input Return Loss 22 - 36 GHz dB 6 12 Output Return Loss 22 - 36 GHz dB 4 10 Small Signal Gain dB 12 20 Gain Flatness dB +/-4 Reverse Isolation dB 30 45 Noise Figure 24 - 40 GHz dB 2 3 Output Power for 1dB Compression Point 5 V dBm 9 Output Third Order Intercept Point 5 V dBm 16 Drain Bias Voltage VDC 3 5 Supply Current V = 3 V or 5 V mA 35 50 D Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid Parameter Absolute Maximum damage: Supply Voltage 7 V DC Static Sensitivity Supply Current 70 mA Gallium Arsenide Integrated Circuits are sensitive to Input Power 12 dBm electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Storage Temperature -65C to +165C should be used when handling these class 2 devices. Operating Temperature -55C to +85C Channel Temperature +175C 1. Channel temperature directly affects a device s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: