XP1042-QT Power Amplifier Rev. V3 12 - 16 GHz Features Functional Schematic 21 dB Small Signal Gain V 1 V 2 V 3 N/C D D D 25 dBm P1dB Compression Point 38 dBm Output IP3 Linearity 16 15 14 13 17 dB Gain Control with Bias Adjust Lead-Free 3 mm 16-lead QFN Package 100% RF Testing N/C N/C 12 1 RoHS* Compliant and 260C Reflow Compatible 2 11 N/C N/C Description RF 3 10 RF IN OUT The XP1042-QT is a packaged driver amplifier that operates over the 12 - 16 GHz frequency band. The N/C 4 9 N/C device provides 21 dB gain and 38 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 7 8 5 6 3 mm QFN package. The device includes on-chip ESD protection structures and DC by-pass V 1 V 2 V 3 N/C G G G capacitors to ease the implementation and volume assembly of the packaged part. The device is manufactured in 0.5 m GaAs pHEMT Pin Configuration device technology with BCB wafer coating to enhance ruggedness and repeatability of Pin No. Function Pin No. Function performance. 1-2 Not Connected 10 RF Output The XP1042-QT is specifically designed for Point to Point radio applications and is well suited for other 3 RF Input 11-12 Not Connected telecom applications such as SATCOM and VSAT. 4 Not Connected 13 Drain 3 Bias 5 Gate 1 Bias 14 Drain 2 Bias 6 Gate 2 Bias 15 Drain 1 Bias 1 Ordering Information 7 Gate 3 Bias 16 Not Connected Part Number Package 2 8-9 Not Connected 17 Paddle XP1042-QT-0G00 bulk quantity 2. The exposed pad centered on the package bottom must be XP1042-QT-0G0T tape and reel connected to RF and DC ground. XP1042-QT-EV1 evaluation module 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XP1042-QT Power Amplifier Rev. V3 12 - 16 GHz Electrical Specifications: Freq = 12 - 16 GHz, T = +25C A Parameter Units Min. Typ. Max. Small Signal Gain (S21) dB 19 21 - Input Return Loss (S11) dB - 12 - Output Return Loss (S22) dB - 10 - Reverse Isolation (S12) dB - 50 - NF at Max Gain dB - 6 8 P1dB dB - 25 - OIP3 at Pout = 8 dBm per Tone dBm 36 38 - Drain Bias Voltage (Vd1,2,3) VDC - 5 - Gate Bias Voltage (Vg1,2,3) VDC -2 -1 - Supply Current (Id1) mA - 75 125 Supply Current (Id2) mA - 75 125 Supply Current (Id3) mA - 150 250 3,4 Absolute Maximum Ratings Parameter Absolute Max. Handling Procedures Supply Voltage (Vd1,2,3) +8.0 V Please observe the following precautions to avoid damage: Supply Current (Id1,2,3) 550 mA Static Sensitivity Gate Bias Voltage (Vg1,2,3) -2.4 V Gallium Arsenide Integrated Circuits are sensitive Max Power Dissipation (Pdiss) 2.8 W to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control RF Input Power 15 dBm techniques should be used when handling these Operating Temperature (Ta) -55C to +85C Class 1A devices. Storage Temperature (Tstg) -65C to +165C 5 Channel Temperature (Tch) 150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: