1N6620 thru 1N6625
WWW.Microsemi .COM
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
SCOTTSDALE DIVISION
RECTIFIERS
DESCRIPTION APPEARANCE
This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal Category I metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a US
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
Package A
Axial
IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6620 thru 1N6625
WWW.Microsemi .COM
1N6620 thru 1N6625
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
SCOTTSDALE DIVISION
RECTIFIERS
o
ELECTRICAL CHARACTERISTICS @ 25 C
TYPE
MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD
NUMBER
BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY
DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE
CURRENT I @
R
VOLTAGE VOLTAGE TIME (LOW TIME (HIGH
V @ I I (rec) V Max
F F V RM FRM
RWM
V CURRENT) CURRENT)
R V
RWM I = 2A, I = 0.5A
I F F
R
I = 50A o o
R t t
rr rr 100A/ s
T =25C T =150 C t =12ns
A A fr
Note 1 Note 2
Note 2
V V @ A V @ A V ns ns A V
A A
1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12
1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12
1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12
1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18
1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18
1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750,
F RM R(REC)
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, di/dt=100 A/s MIL-STD-750, Method 4031,
F
Condition D.
SYMBOLS & DEFINITIONS
Symbol Definition
V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
BR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
V
RWM
temperature range.
V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
F
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
I
R
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
C
picofarads.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
t changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
rr
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1 FIGURE 2
Typical Forward Current Typical Forward Current
vs vs
Forward Voltage Forward Voltage
Copyright 2009
Microsemi
Page 2
10-06-2009 REV C; SA7-55.pdf
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503