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X-On Electronics has gained recognition as a prominent supplier of 23LCV1024-ISN SRAM across the USA, India, Europe, Australia, and various other global locations. 23LCV1024-ISN SRAM are a product manufactured by Microchip. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

23LCV1024-ISN Microchip

23LCV1024-ISN electronic component of Microchip
23LCV1024-ISN Microchip
23LCV1024-ISN SRAM
23LCV1024-ISN  Semiconductors

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See Product Specifications
Part No. 23LCV1024-ISN
Manufacturer: Microchip
Category: SRAM
Description: Memory; SRAM; 128kx8bit; 2.5÷5.5V; 20MHz; SO8; Interface: SPI
Datasheet: 23LCV1024-ISN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
17: USD 3.7362 ea
Line Total: USD 63.52 
Availability - 77
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ: 17  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 5
Multiples : 5
5 : USD 3.9625
50 : USD 3.4625
100 : USD 3.3
300 : USD 3.25
500 : USD 3.2
1000 : USD 3.15
2500 : USD 3.1
5000 : USD 3.0625

53
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 17
Multiples : 1
17 : USD 3.7362
25 : USD 3.6036
100 : USD 3.4164

14
Ship by Wed. 15 Jan to Mon. 20 Jan
MOQ : 1
Multiples : 1
1 : USD 6.0915
10 : USD 5.5022
30 : USD 5.1521
100 : USD 4.7982
500 : USD 4.6348
1000 : USD 4.561

3390
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 2.981
25 : USD 2.926
100 : USD 2.926

238
Ship by Mon. 06 Jan to Wed. 08 Jan
MOQ : 1
Multiples : 1
1 : USD 4.438
10 : USD 4.256
11 : USD 4.2
25 : USD 4.158
100 : USD 4.032

1455
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 20
Multiples : 5
20 : USD 4.8482
50 : USD 4.2365
100 : USD 4.0377
300 : USD 3.9765
500 : USD 3.9153

238
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 18
Multiples : 1
18 : USD 5.8046

53
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 19
Multiples : 1
19 : USD 3.4164

77
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 17
Multiples : 1
17 : USD 3.7362
25 : USD 3.6036
100 : USD 3.4164

1794
Ship by Wed. 08 Jan to Tue. 14 Jan
MOQ : 22
Multiples : 1
22 : USD 3.0063

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 23LCV1024-ISN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 23LCV1024-ISN and other electronic components in the SRAM category and beyond.

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Memory; SRAM; 128kx8bit; 2.5÷5.5V; 20MHz; TSSOP8; Interface: SPI
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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23LCV1024 1 Mbit SPI Serial SRAM with Battery Backup and SDI Interface Device Selection Table Part Dual I/O Battery Max. Clock VCC Range Packages Number (SDI) Backup Frequency 23LCV1024 2.5-5.5V Yes Yes 20 MHz SN, ST, P Features: Description: SPI-Compatible Bus Interface: The Microchip Technology Inc. 23LCV1024 is a 1 Mbit Serial SRAM device. The memory is accessed via a - 20 MHz Clock rate simple Serial Peripheral Interface (SPI) compatible - SPI/SDI mode serial bus. The bus signals required are a clock input Low-Power CMOS Technology: (SCK) plus separate data in (SI) and data out (SO) - Read Current: 3 mA at 5.5V, 20 MHz lines. Access to the device is controlled through a Chip - Standby Current: 4 A at +85C Select (CS) input. Additionally, SDI (Serial Dual Inter- face) is supported if your application needs faster data Unlimited Read and Write Cycles rates. External Battery Backup Support This device also supports unlimited reads and writes to Zero Write Time the memory array, and supports data backup via an 128K x 8-bit Organization: external battery/coin cell connected to VBAT (pin 7). - 32-byte page The 23LCV1024 is available in standard packages Byte, Page and Sequential mode for Reads and including 8-lead SOIC, PDIP and advanced 8-lead Writes TSSOP. High Reliability Temperature Range Supported: Package Types (not to scale) - Industrial (I): -40Cto +85C Pb-Free and RoHS Compliant, Halogen Free 8-Lead SOIC, TSSOP and PDIP Packages SOIC/TSSOP/PDIP Pin Function Table Name Function CS 1 8 Vcc CS Chip Select Input SO/SIO1 2 7 VBAT SO/SIO1 Serial Output/SDI Pin NC 3 6 SCK Vss Ground Vss 4 5 SI/SIO0 SI/SIO0 Serial Input/SDI Pin SCK Serial Clock VBAT External Backup Supply Input Vcc Power Supply 2012 Microchip Technology Inc. Preliminary DS25156A-page 123LCV1024 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.3V to VCC +0.3V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature under bias...............................................................................................................-40C to +85C NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C DC CHARACTERISTICS Param. (1) Sym. Characteristic Min. Typ. Max. Units Test Conditions No. D001 VCC Supply voltage 2.5 5.5 V 23LCV1024 D002 VIH High-level input .7 VCC VCC +0.3 V voltage D003 VIL Low-level input -0.3 0.10xVCC V 23LCV1024 voltage D004 VOL Low-level output 0.2 VIOL = 1 mA voltage D005 VOH High-level output VCC -0.5 V IOH = -400 A voltage D006 ILI Input leakage 1 ACS = VCC, VIN = VSS OR VCC current D007 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D008 ICC Read Operating current 3 10 mA FCLK = 20 MHz SO = O, 5.5V D009 ICCS Standby current 4 10 ACS = VCC = 5.5V, Inputs tied to VCC or VSS D010 CINT Input capacitance 7 pF VCC = 0V, f = 1 MHz, Ta = 25C (Note 1) D011 VDR RAM data retention 1.0 V (Note 2) voltage D012 VTRIP VBAT Change Over 1.6 1.8 2.0 V Typical at Ta = 25C (Note 1) D013 VBAT VBAT Voltage Range 1.4 3.6 V (Note 1) D014 IBAT VBAT Current 1 A Typical at 2.5V, Ta = 25C (Note 1) Note 1: This parameter is periodically sampled and not 100% tested. Typical measurements taken at room temperature (25C). 2: This is the limit to which VDD can be lowered without losing RAM data. This parameter is periodically sampled and not 100% tested. DS25156A-page 2 Preliminary 2012 Microchip Technology Inc.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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