X-On Electronics has gained recognition as a prominent supplier of 24VL014T/SN EEPROM across the USA, India, Europe, Australia, and various other global locations. 24VL014T/SN EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

24VL014T/SN Microchip

24VL014T/SN electronic component of Microchip
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Part No.24VL014T/SN
Manufacturer: Microchip
Category: EEPROM
Description: EEPROM 1K 128 X 8 SERIAL EE 1.5V
Datasheet: 24VL014T/SN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3300: USD 0.5291 ea
Line Total: USD 1746.03 
Availability - 0
MOQ: 3300  Multiples: 3300
Pack Size: 3300
Availability Price Quantity
0
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 3300
Multiples : 3300
3300 : USD 0.5291

   
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We are delighted to provide the 24VL014T/SN from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 24VL014T/SN and other electronic components in the EEPROM category and beyond.

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24VL014 2 1K I C Serial EEPROM Device Selection Table Description: Part Number VCC Range Max Clock The Microchip Technology Inc. 24VL014 is a 1 Kbit Serial Electrically Erasable PROM with operation (1) 24VL014 1.5 to 3.6V 400 kHz down to 1.5V. The device is organized as a single block of 128 x 8-bit memory with a 2-wire serial interface. Note 1: 100 kHz for VCC < 1.8V Low-current design permits operation with maximum standby and active currents of only 1 A and 400 A, Features: respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow Single-Supply with Operation down to 1.5V the connection of up to eight 24VL014 devices on the Low-Power CMOS Technology: same bus for up to 8 Kbits of contiguous EEPROM - 400 A active current, maximum memory. The device is available in the standard 8-pin -1 A standby current, maximum PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and 2 2-Wire Serial Interface Bus, I C Compatible MSOP packages. The 24VL014 is also available in the 6-lead SOT-23 package. Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce Block Diagram 100 kHz and 400 kHz Compatibility Page Write Buffer for up to 16 Bytes WP A0 A1 A2 HV Generator Self-Timed Write Cycle (including Auto-Erase) Hardware Write Protection for the Entire Array I/O Memory (00h-7Fh) Control Control EEPROM Logic Cascadable up to Eight Devices XDEC Logic Array More than 1 Million Erase/Write Cycles ESD Protection > 4,000V SDA SCL Data Retention > 200 Years Write-Protect Factory Programming (QTP) Available Circuitry VCC 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP YDEC VSS Packages Sense Amp. 6-lead SOT-23 package R/W Control Temperature Range: - -20C to +85C Pb-Free and RoHS Compliant Package Types PDIP, MSOP SOIC, TSSOP A0 1 8 VCC 1 8 A0 VCC A1 2 7 WP 2 7 A1 WP A2 3 6 SCL A2 3 6 SCL VSS 4 5 SDA 4 5 VSS SDA TDFN SOT-23 A0 1 8 VCC SCL 1 6 VCC 7 WP A1 2 VSS 2 5 A0 SCL 6 A2 3 A1 SDA 3 4 VSS 5 4 SDA 2009 Microchip Technology Inc. DS22129A-page 124VL014 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied..................................................................................................-20C to +85C ESD protection on all pins .................................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS VCC = +1.5V to 3.6V TA = -20C to +85C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, A2, SCL, SDA and WP pins: D2 VIH High-level input voltage 0.7 VCC V D3 VIL Low-level input voltage 0.3 VCC V D4 VHYS Hysteresis of Schmitt 0.05 VCC V (Note) Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 3.6V IOL = 2.1 mA VCC = 2.5V D6 ILI Input leakage current 1 AVIN = VSS or VCC, WP = VSS D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 3.6V (Note) COUT (all inputs/outputs) TA = 25C, f = 1 MHz D9 ICC Read Operating current 400 AVCC = 3.6V, SCL = 400 kHz ICC Write 3 mA VCC = 3.6V D10 ICCS Standby current 1 AVCC = 3.6V, SCL = SDA = VCC WP = VSS, A0, A1, A2 = VSS Note: This parameter is periodically sampled and not 100% tested. DS22129A-page 2 2009 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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