X-On Electronics has gained recognition as a prominent supplier of 25AA1024T-I/SM EEPROM across the USA, India, Europe, Australia, and various other global locations. 25AA1024T-I/SM EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

25AA1024T-I/SM Microchip

25AA1024T-I/SM electronic component of Microchip
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Part No.25AA1024T-I/SM
Manufacturer: Microchip
Category: EEPROM
Description: Microchip Technology EEPROM 128kx8 - 1.8V
Datasheet: 25AA1024T-I/SM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2100: USD 1.963 ea
Line Total: USD 4122.3 
Availability - 2037
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 2100  Multiples: 2100
Pack Size: 2100
Availability Price Quantity
7748
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 5
5 : USD 5.4125
100 : USD 4.6
250 : USD 4.525
525 : USD 4.4625
1050 : USD 4.4
1575 : USD 4.325
2100 : USD 4.2625

1777
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 5.3833
10 : USD 5.3001
25 : USD 5.2169
100 : USD 5.1337
250 : USD 5.0505
500 : USD 4.9673
1000 : USD 4.8841

2037
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2100
Multiples : 2100
2100 : USD 1.963

27
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 3.5362
10 : USD 3.453
30 : USD 3.397
100 : USD 3.3408

5399
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.191
100 : USD 4.158
500 : USD 4.037

7745
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 15
Multiples : 5
15 : USD 6.6071
100 : USD 5.6588
250 : USD 5.46
525 : USD 5.4141
1050 : USD 5.3529

1777
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2
Multiples : 1
2 : USD 4.8841

   
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We are delighted to provide the 25AA1024T-I/SM from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25AA1024T-I/SM and other electronic components in the EEPROM category and beyond.

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25AA1024 1-Mbit SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA1024 1.8-5.5V 256 Byte I MF, P, SM Features Description Maximum Clock: 20 MHz The Microchip Technology Inc. 25AA1024 is a Byte and Page-level Write Operations: 1024-Kbit serial EEPROM memory with byte-level and - 256 byte page page-level serial EEPROM functions. It also features - 6 ms maximum write cycle time Page, Sector and Chip erase instructions typically - No page or sector erase required associated with Flash-based products. These Low-Power CMOS Technology: instructions are not required for byte or page write - Max. Write current: 7 mA at 5.5V operations. The memory is accessed via a simple - Max. Read current: 10 mA at 5.5V, 20 MHz Serial Peripheral Interface (SPI) compatible serial bus. - Standby current: 1 A at 2.5V, 85C The bus signals required are a clock input (SCK) plus (Deep Power-down) separate data in (SI) and data out (SO) lines. Access to Electronic Signature for Device ID the device is controlled by a Chip Select (CS) input. Self-Timed Erase and Write Cycles: Communication to the device can be paused via the - Page Erase (6 ms maximum) hold pin (HOLD). While the device is paused, - Sector Erase (10 ms maximum) transitions on its inputs will be ignored, with the - Chip Erase (10 ms maximum) exception of Chip Select, allowing the host to service Sector Write Protection (32K byte/sector): higher priority interrupts. - Protect none, 1/4, 1/2 or all of array Packages Built-in Write Protection: - Power-on/off data protection circuitry 8-Lead DFN, 8-Lead PDIP and 8-Lead SOIJ - Write enable latch - Write-protect pin Package Types (not to scale) High Reliability: - Endurance: 1M erase/write cycles DFN PDIP/SOIJ - Data Retention: >200 years (MF) (P, SM) - ESD Protection: 4000V 1 CS 8 VCC Temperature Ranges Supported: CS 1 8 VCC 2 SO 7 HOLD - Industrial (I):-40C to +85C SO 2 7 HOLD 3 WP 6 SCK 3 6 RoHS Compliant WP SCK VSS 4 5 SI VSS 4 5 SI Automotive AEC-Q100 Qualified Pin Function Table Name Function CS Chip Select Input SO Serial Data Output WP Write-Protect VSS Ground SI Serial Data Input SCK Serial Clock Input HOLD Hold Input VCC Supply Voltage 2007-2021 Microchip Technology Inc. DS20001836K-page 1 25AA1024 25AA102425AA1024 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V SS ..........................................................................................................-0.6V to VCC +1.0V All inputs and outputs w.r.t. V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins.......................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: A = 0C to +85C VCC = 1.8V to 5.5V Industrial (I)*: T DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 2.0V to 5.5V * Limited industrial temperature range. Param. Sym. Characteristic Min. Max. Units Test Conditions No. High-level Input D001 VIH1 0.7 VCC VCC +1 V Voltage D002 VIL1 -0.3 0.3 VCC VVCC 2.7V Low-level Input Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL 0.4 VIOL = 2.1 mA Low-level Output Voltage D005 VOL 0.2 VIOL = 1.0 mA, VCC<2.5V High-level Output D006 VOH VCC -0.2 V IOH = -400 A Voltage Input Leakage D007 ILI 1 A CS = VCC, VIN = VSS or VCC Current Output Leakage D008 ILO CS = VCC, VOUT = VSS or VCC 1 A Current Internal Capacitance TA = 25C, CLK = 1.0 MHz, D009 CINT (all inputs and 7 pF VCC = 5.0V (Note) outputs) VCC = 5.5V FCLK = 20.0 MHz 10 mA SO = Open D010 ICCread VCC = 2.5V FCLK = 10.0 MHz 5 mA SO = Open Operating Current 7 mAVCC = 5.5V D011 ICCWRITE 5 mAVCC = 2.5V CS = VCC = 5.5V, Inputs tied to VCC or D012 ICCS Standby Current 12 A VSS, 85C Deep Power-down CS = VCC = 2.5V, Inputs tied to VCC or D013 ICCSPD 1 A Current VSS, 85C Note: This parameter is periodically sampled and not 100% tested. 2007-2021 Microchip Technology Inc. DS20001836K-page 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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VECTRON INTL
Vitesse Microsemi
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