Product Information

2N6298

2N6298 electronic component of Microchip

Datasheet
Darlington Transistors Power BJT

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 39.5255 ea
Line Total: USD 39.53

91 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
91 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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2N6298
Microchip

1 : USD 39.5255
10 : USD 39.33
25 : USD 38.87
100 : USD 37.3865
250 : USD 37.375

     
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RoHS - XON
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2N6298 and 2N6299 Qualified Levels: PNP Darlington Power Silicon Transistor JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/540 versions DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. TO-213AA (TO-66) Package Important: For the latest information, visit our website 2N6298 and 2N6299 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6298 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Base current: The value of the dc current into the base terminal. B I Collector current: The value of the dc current into the collector terminal. C I Emitter current: The value of the dc current into the emitter terminal. E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. V Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. CC Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the V CEO base terminal is open-circuited. V Emitter-base voltage: The dc voltage between the emitter and the base. EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the V EBO collector terminal open-circuited. T4-LDS-0310, Rev. 1 (8/9/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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