X-On Electronics has gained recognition as a prominent supplier of 2N6298 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. 2N6298 Darlington Transistors are a product manufactured by Microchip. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

2N6298 Microchip

2N6298 electronic component of Microchip
Images are for reference only
See Product Specifications
Part No.2N6298
Manufacturer: Microchip
Category: Darlington Transistors
Description: Darlington Transistors Power BJT
Datasheet: 2N6298 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 35.772 ea
Line Total: USD 35.77 
Availability - 89
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 44.2875
5 : USD 42.75
10 : USD 42.1125
25 : USD 41.425
50 : USD 41.0125
75 : USD 40.6
100 : USD 39.65

89
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 35.772
10 : USD 35.772
25 : USD 35.772
100 : USD 35.761
500 : USD 35.508
1000 : USD 35.387
5000 : USD 34.969
10000 : USD 34.947

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N6298 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6298 and other electronic components in the Darlington Transistors category and beyond.

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Image Part-Description
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Stock Image NTE2341
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

2N6298 and 2N6299 Qualified Levels: PNP Darlington Power Silicon Transistor JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/540 versions DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV level. This TO-213AA isolated package features a 180 degree lead orientation. TO-213AA (TO-66) Package Important: For the latest information, visit our website 2N6298 and 2N6299 MECHANICAL and PACKAGING CASE: Hermetic, TO-213AA package. Nickel plate with nickel cap. TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available. MARKING: MSC, part number, date code, polarity symbol WEIGHT: Approximately 5.7 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6298 (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS Compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS Compliant Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Base current: The value of the dc current into the base terminal. B I Collector current: The value of the dc current into the collector terminal. C I Emitter current: The value of the dc current into the emitter terminal. E T Case temperature: The temperature measured at a specified location on the case of a device. C V Collector-base voltage: The dc voltage between the collector and the base. CB Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is V CBO open-circuited. V Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. CC Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the V CEO base terminal is open-circuited. V Emitter-base voltage: The dc voltage between the emitter and the base. EB Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the V EBO collector terminal open-circuited. T4-LDS-0310, Rev. 1 (8/9/13) 2013 Microsemi Corporation Page 2 of 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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