215
The NTE214 transistor is an NPN silicon radio frequency (RF) transistor designed for high frequency, wideband, and low noise applications. It features an epitaxial base for high gain and low noise, a wide dynamic frequency range of 0.5 to 300 MHz, a low collector to emitter saturation voltage of 0.25 V, and low standing current distortion. It is commonly used in telecommunications, radar, computers, and automotive applications.