X-On Electronics has gained recognition as a prominent supplier of NTE219MCP across the USA, India, Europe, Australia, and various other global locations. NTE219MCP are a product manufactured by NTE. We provide cost-effective solutions for NTE219MCP, ensuring timely deliveries around the world.

NTE219MCP NTE

NTE219MCP electronic component of NTE
Images are for reference only
See Product Specifications
Part No.NTE219MCP
Manufacturer: NTE
Category: Unclassified
Description: MATCH COMPLEMENTARY PAIR O
Datasheet: NTE219MCP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 9.8162 ea
Line Total: USD 98.16 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 10
Multiples : 1
10 : USD 9.8162
50 : USD 6.8607
100 : USD 6.3277
200 : USD 5.8741
500 : USD 5.4886

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 13.102
2 : USD 8.5778
5 : USD 8.1072

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE219MCP from our NTE manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE219MCP and other electronic components in the NTE manufacturer and beyond.

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NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications. Features: DC Current Gain: h = 20 70 I = 4A FE C CollectorEmitter Saturation Voltage: V = 1.1V (Max) I = 4A CE(sat) C Excellent Safe Operating Area Absolute Maximum Ratings: CollectorEmitter Voltage, V 60V CEO CollectorEmitter Voltage, V 70V CER CollectorBase Voltage, V 100V CB EmitterBase Voltage, V . 7V EB Continuous Collector Current, I . 15A C Base Current, I 7A B Total Device Dissipation (T = +25C), P . 115W C D Derate Above 25C . 0.657W/C Operating Junction Temperature Range, T 65 to +200C J Storage Temperature Range, T 65 to +200C stg Thermal Resistance, JunctiontoCase, R 1.52C/W thJC Electrical Characteristics: (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 200mA, I = 0, Note 1 60 V CEO(sus) C B CollectorEmitter Sustaining Voltage V 70 V I = 200mA, R = 100 , Note 1 CER(sus) C BE Collector Cutoff Current I V = 30V, I = 0 0.7 mA CEO CE B I V = 100V, V = 1.5V 1.0 mA CEX CE BE(off) V = 100V, V = 1.5V, T = +150C 5.0 mA CE BE(off) C Emitter Cutoff Current I V = 7V, I = 0 5.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%.Electrical Characteristics (Contd): (T =+25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 4A, V = 4V 20 70 FE C CE I = 10A, V = 4V 5 C CE CollectorEmitter Saturation Voltage V I = 4A, I = 400mA 1.1 V CE(sat) C B I = 10A, I = 3.3A 3.0 V C B BaseEmitter ON Voltage V I = 4A, V = 4V 1.5 V BE(on) C CE Second Breakdown Second Breakdown Collector Current I V = 40V, t = 1.0s Nonrepetitive 2.87 A s/b CE with Base Forward Biased Dynamic Characteristics Current GainBandwidth Product f I = 500mA, V = 10V, f = 1MHz 2.5 MHz T C CE SmallSignal Current Gain h I = 1A, V = 4V, f = 1kHz 15 120 fe C CE SmallSignal Current Gain Cutoff f V = 4V, I = 1A, f = 1kHz 10 kHz hfe CE C Frequency Note 1. Pulse Test: Pulse Width 300 s. Duty Cycle 2%. Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and NTE130 (NPN)135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) .215 (5.45) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max .525 (13.35) R Max Base Collector/Case

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