X-On Electronics has gained recognition as a prominent supplier of NTE247MP Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. NTE247MP Darlington Transistors are a product manufactured by NTE. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

NTE247MP NTE

NTE247MP electronic component of NTE
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See Product Specifications
Part No.NTE247MP
Manufacturer: NTE
Category: Darlington Transistors
Description: MATCHED PAIR OF NTE247
Datasheet: NTE247MP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 17.4159 ea
Line Total: USD 87.08 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 1
5 : USD 17.4159
50 : USD 11.2203
100 : USD 10.3545
200 : USD 9.6174
500 : USD 8.9739

0
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 21.4596
2 : USD 14.0505
4 : USD 13.283

   
Manufacturer
Product Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE247MP from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE247MP and other electronic components in the Darlington Transistors category and beyond.

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NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for generalpurpose amplifier and low frequency switching applications. Features: High DC Current Gain: h = 3500 Typ I = 5A FE C Collector Emitter Sustaining Voltage: V = 100V Min 100mA CEO(sus) Monolithic Construction with Built In Base Emitter Shunt Resistors Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 100V CEO Collector Base Voltage, V ........................................................ 100V CB EmitterBase Voltage, V ........................................................... 5V EB Collector Current, I C Continuous .................................................................. 12A Peak ....................................................................... 20A Base Current, I ................................................................ 200mA B Total Power Dissipation (T = +25C), P ........................................... 150W C D Derate Above 25 C ..................................................... 0.857W/ C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R .................................... 1.17 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter SustainingVoltage V I = 100mA, I = 0, Note 1 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 1.0 mA CEO CE E I V = 100V, V = 1.5V 0.5 mA CEX CE BE(off) V = 100V, V = 1.5V, T = +150C 5.0 mA CE BE(off) A Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Rev. 1220Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 6A 750 18000 FE CE C V = 3V, I = 12A 100 CE C CollectorEmitter Saturation Voltage V I = 6A, I = 24mA 2.0 V CE(sat) C B I = 12A, I = 120mA 3.0 V C B BaseEmitter Saturation Voltage V I = 12A, I = 120mA 4.0 V BE(sat) C B BaseEmitter ON Voltage V V = 3V, I = 6A 2.8 V BE(on) CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 5A, f = 1kHz 300 fe CE C Magnitude of Common Emitter h V = 3V, I = 5A, f = 1MHz 4.0 MHz fe CE C SmallSignal ShortCircuit Forward Current Transfer Ratio Output Capacitance C pF ob NTE247 V = 10V, I = 0, f = 0.1MHz 300 CB E NTE248 500 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% NTE247 .135 (3.45) Max C .875 (22.2) .350 (8.89) B Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) NTE248 .665 .215 (5.45) (16.9) C .430 B (10.92) .188 (4.8) R Max .525 (13.35) R Max E Base Collector/Case

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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