NTE247 (NPN) & NTE248 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for generalpurpose amplifier and low frequency switching applications. Features: High DC Current Gain: h = 3500 Typ I = 5A FE C Collector Emitter Sustaining Voltage: V = 100V Min 100mA CEO(sus) Monolithic Construction with Built In Base Emitter Shunt Resistors Absolute Maximum Ratings: CollectorEmitter Voltage, V ..................................................... 100V CEO Collector Base Voltage, V ........................................................ 100V CB EmitterBase Voltage, V ........................................................... 5V EB Collector Current, I C Continuous .................................................................. 12A Peak ....................................................................... 20A Base Current, I ................................................................ 200mA B Total Power Dissipation (T = +25C), P ........................................... 150W C D Derate Above 25 C ..................................................... 0.857W/ C Operating Junction Temperature Range, T .................................. 65 to +200C J Storage Temperature Range, T .......................................... 65 to +200C stg Thermal Resistance, Junction toCase, R .................................... 1.17 C/W thJC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter SustainingVoltage V I = 100mA, I = 0, Note 1 100 V CEO(sus) C B Collector Cutoff Current I V = 50V, I = 0 1.0 mA CEO CE E I V = 100V, V = 1.5V 0.5 mA CEX CE BE(off) V = 100V, V = 1.5V, T = +150C 5.0 mA CE BE(off) A Emitter Cutoff Current I V = 5V, I = 0 2.0 mA EBO BE C Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% Rev. 1220Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h V = 3V, I = 6A 750 18000 FE CE C V = 3V, I = 12A 100 CE C CollectorEmitter Saturation Voltage V I = 6A, I = 24mA 2.0 V CE(sat) C B I = 12A, I = 120mA 3.0 V C B BaseEmitter Saturation Voltage V I = 12A, I = 120mA 4.0 V BE(sat) C B BaseEmitter ON Voltage V V = 3V, I = 6A 2.8 V BE(on) CE C Dynamic Characteristics SmallSignal Current Gain h V = 3V, I = 5A, f = 1kHz 300 fe CE C Magnitude of Common Emitter h V = 3V, I = 5A, f = 1MHz 4.0 MHz fe CE C SmallSignal ShortCircuit Forward Current Transfer Ratio Output Capacitance C pF ob NTE247 V = 10V, I = 0, f = 0.1MHz 300 CB E NTE248 500 pF Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 2% NTE247 .135 (3.45) Max C .875 (22.2) .350 (8.89) B Dia Max Seating Plane E .312 (7.93) Min .040 (1.02) Emitter 1.187 (30.16) NTE248 .665 .215 (5.45) (16.9) C .430 B (10.92) .188 (4.8) R Max .525 (13.35) R Max E Base Collector/Case