X-On Electronics has gained recognition as a prominent supplier of NTE2504 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE2504 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE2504 NTE

NTE2504 electronic component of NTE
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See Product Specifications
Part No.NTE2504
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 25V; 2A; 1.2W; TO126
Datasheet: NTE2504 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
25: USD 2.05 ea
Line Total: USD 51.25 
Availability - 29
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
29
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 25
Multiples : 1
25 : USD 2.05
250 : USD 1.625
500 : USD 1.5375
1000 : USD 1.4875
2500 : USD 1.425
5000 : USD 1.3875
7500 : USD 1.375
10000 : USD 1.35

28
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.282
3 : USD 2.058
10 : USD 1.82
11 : USD 1.61
30 : USD 1.526

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2504 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2504 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: Large Current Capacity (I = 2A) C Adoption of MBIT Process High DC Current Gain: h = 800 to 3200 FE Low CollectorEmitter Saturation Voltage: V < 0.5V CE(sat) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 10V, I = 0 0.1 A EBO EB C DC Current Gain h V = 5V, I = 500mA 800 1500 3200 FE CE C Current GainBandwidth Product f V = 10V, I = 50mA 260 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 27 pF ob CE CollectorEmitter Saturation Voltage V I = 1A, I = 20mA 0.15 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 20mA 0.85 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 30 V (BR)CBO C E.315 (8.0) .106 (2.7) .433 (11.0) EC B .610 (15.5) .094 (2.4)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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