NTE2504 NTE

NTE2504 Silicon NPN Transistor High Gain Audio Amplifier Features: Large Current Capacity (I = 2A) C Adoption of MBIT Process High DC Current Gain: h = 800 to 3200 FE Low CollectorEmitter Saturation Voltage: V < 0.5V CE(sat) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation, P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W C Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 10V, I = 0 0.1 A EBO EB C DC Current Gain h V = 5V, I = 500mA 800 1500 3200 FE CE C Current GainBandwidth Product f V = 10V, I = 50mA 260 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 27 pF ob CE CollectorEmitter Saturation Voltage V I = 1A, I = 20mA 0.15 0.5 V CE(sat) C B BaseEmitter Saturation Voltage V I = 1A, I = 20mA 0.85 1.2 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 30 V (BR)CBO C E.315 (8.0) .106 (2.7) .433 (11.0) EC B .610 (15.5) .094 (2.4)