NTE2501 (NPN) & NTE2502 (PNP) Silicon Complementary Transistors High Voltage for Video Output TO126 Fully Isolated Type Package Features: High Breakdown Voltage Excellent High Frequency Characteristics Applications: High Definition CRT Display Color TV Chroma Output, High Breakdown Voltage Drivers Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Collector Base Voltage, V ...................................................... 300V CBO CollectorEmitter Voltage, V ..................................................... 300V CEO EmitterBase Voltage, V .......................................................... 5V EBO Collector Current, I C Continuous ............................................................... 100mA Peak .................................................................... 200mA Collector Dissipation, P C T = +25C ................................................................. 1.5W A T = +25C .................................................................. 7W C Operating Junction Temperature, T ............................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 200V, I = 0 0.1 A CBO CB E Emitter Cutoff Current I V = 4V, I = 0 0.1 A EBO EB C DC Current Gain h V = 10V, I = 10mA 100 200 FE CE C Gain Bandwidth Product f V = 30V, I = 10mA 70 MHz T CE C Rev. 316Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Output Capacitance NTE2501 C V = 30V, f = 1MHz 2.6 pF ob CB NTE2502 3.1 pF Reverse Transfer Capacitance NTE2501 C V = 30V, f = 1MHz 1.8 pF re CB NTE2502 2.3 pF CollectorEmitter Saturation Voltage V I = 20mA, I = 2mA 600 mV CE(sat) C B BaseEmitter Saturation Voltage V I = 20mA, I = 2mA 1.0 V BE(sat) C B CollectorBase Breakdown Voltage V I = 10A, I = 0 300 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 1mA, R = 300 V (BR)CEO C BE EmitterBase Breakdown Voltage V I = 10A, I = 0 5 V (BR)EBO E C .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) EC B .610 (15.5) .094 (2.4)