NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver Features: High Breakdown Voltage: V = 80V CEO Large I Capacity: I = 1A DC C C Good h Linearity FE Low Collector Saturation Voltage Applications: Medium Power Output Stages HighVoltage Drivers Absolute Maximum Ratings: CollectorBase Voltage, V 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CBO CollectorEmitter Voltage, V 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO EmitterBase Voltage, V 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Collector Dissipation, P 900mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C Junction Temperature, T +135. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . C j Storage Temperature Range, T 55. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . to +125C stg Note 1. P = 20ms, Duty Cycle = 1/2 W Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorEmitter Breakdown Voltage V I = 1mA 80 V (BR)CEO C CollectorBase Breakdown Voltage V I = 50 A 100 V (BR)CBO C EmitterBase Breakdown Voltage V I = 50 A 5 V (BR)EBO E Collector Cutoff Current I V = 80V 1 A CBO CB Emitter Cutoff Current I V = 4V 1 A EBO EB DC Current Gain h V = 3V, I = 50mA 120 270 FE CE C Collector Saturation Voltage V I = 500A, I = 50mA 0.15 0.4 V CE(sat) C B Transition Frequency f V = 10V, I = 50mA 100 MHz T CE C Output Capacitance C V = 10V, f = 1MHz 20 pF ob CB.102 (2.6) .280 (7.11) .185 (4.7) E CB .100 (2.54) .138 (3.5) .051 (1.29) .022 (0.55)